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SALYK, O., PORUBA, A., SCHAUER, F.
Originální název
Thermal desorption spectroscopy of hydrogen from a-Si:H
Typ
článek v časopise - ostatní, Jost
Jazyk
angličtina
Originální abstrakt
Thermal desorption spectroscopy (TDS) based on the mass spectroscopy of thermally evolved hydrogen is used for desorption analysis of amorphous hydrogenated silicon (a-Si:H). Two series of glow discharge chemical vapour deposited a-Si:H were investigated by the TDS method. Constant temperature growth rate enabled to determine temperature regions of hydrogen evolution and its total content in the film. These values are compared with the results of infrared (IR) absorption spectroscopy. The dependence of the H content and the position of the maximum of the evolution curve on deposition conditions, as radio frequency (RF) power used in a standard plasma enhanced chemical vapour deposition (PE CVD) glow discharge, was observed. The RF power was related to a silane flow rate during the deposition. The lower temperature of the evolution peaks and simultaneously the lower H content were observed in the layers prepared under the larger relative RF power conditions (the high silane decomposition efficiency). These results correlate well with light degradation measurements in device quality samples.
Klíčová slova
amorphoud silicon, hydrogen, desorption
Autoři
Rok RIV
1996
Vydáno
1. 1. 1996
ISSN
0366-6352
Periodikum
Chemical Papers
Ročník
50
Číslo
4
Stát
Slovenská republika
Strany od
177
Strany do
182
Strany počet
6
BibTex
@article{BUT38348, author="Ota {Salyk} and Aleš {Poruba} and František {Schauer}", title="Thermal desorption spectroscopy of hydrogen from a-Si:H", journal="Chemical Papers", year="1996", volume="50", number="4", pages="6", issn="0366-6352" }