Detail publikace

Thermal desorption spectroscopy of hydrogen from a-Si:H

SALYK, O., PORUBA, A., SCHAUER, F.

Originální název

Thermal desorption spectroscopy of hydrogen from a-Si:H

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

Thermal desorption spectroscopy (TDS) based on the mass spectroscopy of thermally evolved hydrogen is used for desorption analysis of amorphous hydrogenated silicon (a-Si:H). Two series of glow discharge chemical vapour deposited a-Si:H were investigated by the TDS method. Constant temperature growth rate enabled to determine temperature regions of hydrogen evolution and its total content in the film. These values are compared with the results of infrared (IR) absorption spectroscopy. The dependence of the H content and the position of the maximum of the evolution curve on deposition conditions, as radio frequency (RF) power used in a standard plasma enhanced chemical vapour deposition (PE CVD) glow discharge, was observed. The RF power was related to a silane flow rate during the deposition. The lower temperature of the evolution peaks and simultaneously the lower H content were observed in the layers prepared under the larger relative RF power conditions (the high silane decomposition efficiency). These results correlate well with light degradation measurements in device quality samples.

Klíčová slova

amorphoud silicon, hydrogen, desorption

Autoři

SALYK, O., PORUBA, A., SCHAUER, F.

Rok RIV

1996

Vydáno

1. 1. 1996

ISSN

0366-6352

Periodikum

Chemical Papers

Ročník

50

Číslo

4

Stát

Slovenská republika

Strany od

177

Strany do

182

Strany počet

6

BibTex

@article{BUT38348,
  author="Ota {Salyk} and Aleš {Poruba} and František {Schauer}",
  title="Thermal desorption spectroscopy of hydrogen from a-Si:H",
  journal="Chemical Papers",
  year="1996",
  volume="50",
  number="4",
  pages="6",
  issn="0366-6352"
}