Detail publikace

Niobium Oxide and Tantalum Capacitors: M-I-S Model Parameters Comparison

Originální název

Niobium Oxide and Tantalum Capacitors: M-I-S Model Parameters Comparison

Anglický název

Niobium Oxide and Tantalum Capacitors: M-I-S Model Parameters Comparison

Jazyk

en

Originální abstrakt

An analysis of charge carrier transport and charge storage in NbO and Ta capacitors was performed. An aim of this paer is to characterise the active region quality of NbO and Ta capacitors.

Anglický abstrakt

An analysis of charge carrier transport and charge storage in NbO and Ta capacitors was performed. An aim of this paer is to characterise the active region quality of NbO and Ta capacitors.

BibTex


@inproceedings{BUT31370,
  author="Josef {Šikula} and Jan {Hlávka} and Vlasta {Sedláková} and Pavel {Höschel} and Roman {Grill} and Zdeněk {Sita} and Tomáš {Zedníček} and Munecazu {Tacano}",
  title="Niobium Oxide and Tantalum Capacitors: M-I-S Model Parameters Comparison",
  annote="An analysis of charge carrier transport and charge storage in NbO and Ta capacitors was performed. An aim of this paer is to characterise the active region quality of NbO and Ta capacitors.",
  booktitle="25th Capacitor and Resistor Technology Symposium",
  chapter="31370",
  number="3",
  year="2005",
  month="january",
  pages="244",
  type="conference paper"
}