Detail publikace

Charge Carrier Transport in Polymer-Based Thick Resistive Films

Originální název

Charge Carrier Transport in Polymer-Based Thick Resistive Films

Anglický název

Charge Carrier Transport in Polymer-Based Thick Resistive Films

Jazyk

en

Originální abstrakt

We proposed the model for the charge carrier transport in the polymer based thick film structures. The model is based on the assumption that the electric charge transport is due to the electron tunnelling through the barrier between carbon and graphite particles. The main noise and non-linearity sources in polymer based thick film layer are considered to be the contacts between conducting grains. On the basis of this model the sheet resistance and effective number of electrons acting as mobility fluctuators in one point contact can be calculated. From the low frequency noise measurements we can estimate the number of point contacts in the thick film resistive layer. The influence of the polymer vehicle and thermal treatment on the thick film structure is characterized by noise and nonlinearity measurements. During the thermal treatment the conductivity of the resistive layer is changed due to the change of number of contacts between conducting grains - the distance between conducting grains varies as a result of polymer matrix dilatation. Good correlation between noise and non-linearity results was found. For higher noise spectral density we can expect higher value of nonlinearity but this dependence is statistical only.

Anglický abstrakt

We proposed the model for the charge carrier transport in the polymer based thick film structures. The model is based on the assumption that the electric charge transport is due to the electron tunnelling through the barrier between carbon and graphite particles. The main noise and non-linearity sources in polymer based thick film layer are considered to be the contacts between conducting grains. On the basis of this model the sheet resistance and effective number of electrons acting as mobility fluctuators in one point contact can be calculated. From the low frequency noise measurements we can estimate the number of point contacts in the thick film resistive layer. The influence of the polymer vehicle and thermal treatment on the thick film structure is characterized by noise and nonlinearity measurements. During the thermal treatment the conductivity of the resistive layer is changed due to the change of number of contacts between conducting grains - the distance between conducting grains varies as a result of polymer matrix dilatation. Good correlation between noise and non-linearity results was found. For higher noise spectral density we can expect higher value of nonlinearity but this dependence is statistical only.

BibTex


@inproceedings{BUT31368,
  author="Vlasta {Sedláková} and Josef {Šikula}",
  title="Charge Carrier Transport in Polymer-Based Thick Resistive Films",
  annote="We proposed the model for the charge carrier transport in the polymer based thick film structures. The model is based on the assumption that the electric charge transport is due to the electron tunnelling through the barrier between carbon and graphite particles. The main noise and non-linearity sources in polymer based thick film layer are considered to be the contacts between conducting grains. On the basis of this model the sheet resistance and effective number of electrons acting as mobility fluctuators in one point contact can be calculated. From the low frequency noise measurements we can estimate the number of point contacts in the thick film resistive layer. The influence of the polymer vehicle and thermal treatment on the thick film structure is characterized by noise and nonlinearity measurements. During the thermal treatment the conductivity of the resistive layer is changed due to the change of number of contacts between conducting grains - the distance between conducting grains varies as a result of polymer matrix dilatation. Good correlation between noise and non-linearity results was found. For higher noise spectral density we can expect higher value of nonlinearity but this dependence is statistical only.",
  booktitle="24th Capacitor and Resistor Technology Symposium",
  chapter="31368",
  journal="Capacitor and Resistor Technology",
  number="10",
  year="2005",
  month="january",
  pages="93",
  type="conference paper"
}