Detail publikace

Electron Transport in Ta Nanolayers: Application to Tantalum Capacitors

Originální název

Electron Transport in Ta Nanolayers: Application to Tantalum Capacitors

Anglický název

Electron Transport in Ta Nanolayers: Application to Tantalum Capacitors

Jazyk

en

Originální abstrakt

The leakage current value for the various temperatures and applied voltage are frequently used as the reliability indicator for tantalum capacitors. Leakage current provides the information on the insulating layer thickness, its homogeneity and the number of defects in tested sample. In the insulating layer there are defects, which are responsible for the value and time evolution of the leakage current. The leakage current is a result of the random process of charge carrier transport and its DC component gives then information about the first statistical moment of this process. Capacitor structure can be in the first approximation considered as an ideal metal-insulator-semiconductor (MIS) structure. MIS structure model for tantalum capacitors with manganese dioxide cathode can be modified on the base of this leakage current analysis.

Anglický abstrakt

The leakage current value for the various temperatures and applied voltage are frequently used as the reliability indicator for tantalum capacitors. Leakage current provides the information on the insulating layer thickness, its homogeneity and the number of defects in tested sample. In the insulating layer there are defects, which are responsible for the value and time evolution of the leakage current. The leakage current is a result of the random process of charge carrier transport and its DC component gives then information about the first statistical moment of this process. Capacitor structure can be in the first approximation considered as an ideal metal-insulator-semiconductor (MIS) structure. MIS structure model for tantalum capacitors with manganese dioxide cathode can be modified on the base of this leakage current analysis.

BibTex


@inproceedings{BUT30780,
  author="Martin {Kopecký} and Miloš {Chvátal} and Vlasta {Sedláková}",
  title="Electron Transport in Ta Nanolayers: Application to Tantalum Capacitors",
  annote="The leakage current value for the various temperatures and applied voltage are frequently used as the reliability indicator for tantalum capacitors. Leakage current provides the information on the insulating layer thickness, its homogeneity and the number of defects in tested sample. In the insulating layer there are defects, which are responsible for the value and time evolution of the leakage current. The leakage current is a result of the random process of charge carrier transport and its DC component gives then information about the first statistical moment of this process. Capacitor structure can be in the first approximation considered as an ideal metal-insulator-semiconductor (MIS) structure. MIS structure model for tantalum capacitors with manganese dioxide cathode can be modified on the base of this leakage current analysis.",
  address="Piotr Firek, Ryszard Kisiel",
  booktitle="Polymer Electronics and Nanotechnologies: towards System Integration",
  chapter="30780",
  edition="first",
  howpublished="print",
  institution="Piotr Firek, Ryszard Kisiel",
  year="2011",
  month="may",
  pages="137--139",
  publisher="Piotr Firek, Ryszard Kisiel",
  type="conference paper"
}