Detail publikace

Temperature dependence of RTS noise - trap activation energy

HAVRÁNEK, J. PAVELKA, J. ŠIKULA, J. GRMELA, L.

Originální název

Temperature dependence of RTS noise - trap activation energy

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The analysis of RTS in this paper quantitatively explains details of charge carriers trapping and detrapping processes in MOS structures. The emphasis is laid temperature dependence of RTS capture and emission process. It was observed that the current changes are consistent with a single electron being removed from the channel and captured in a localized defect state. It is also quite clear that the frequency of transitions (i.e. the time constant of the associated trap) is strongly dependent on temperature. For higher temperatures, the number of transitions increases promptly. In addition, one can see that at elevated temperatures the current fluctuations begin to resemble the trace, which coincides with a 1/f noise. In the experimental part, n-MOSFET sample N11 was investigated. The RTS noise was very reproducible and the temporal fluctuations in the channel were observed, when the device operated in linear regimes with fixed gate voltage UG. It was possible to find a range in T and UG, for which observed noise randomly switched between two discrete levels, similar to the behavior reported by others. Finally, activation energies for both capture and emission were determinated.

Klíčová slova

RTS noise, temperature dependence, trap activation energy

Autoři

HAVRÁNEK, J.; PAVELKA, J.; ŠIKULA, J.; GRMELA, L.

Rok RIV

2007

Vydáno

17. 11. 2007

Nakladatel

VUT

Místo

Brno

ISBN

978-80-7355-078-3

Kniha

New trends in physics

Číslo edice

1

Strany od

35

Strany do

38

Strany počet

4

BibTex

@inproceedings{BUT28535,
  author="Jan {Havránek} and Jan {Pavelka} and Josef {Šikula} and Lubomír {Grmela}",
  title="Temperature dependence of RTS noise - trap activation energy",
  booktitle="New trends in physics",
  year="2007",
  number="1",
  pages="35--38",
  publisher="VUT",
  address="Brno",
  isbn="978-80-7355-078-3"
}