Detail publikace

RTS Noise and quantum transitions in submicron MOSFETs

ŠIKULA, J. PAVELKA, J. SEDLÁKOVÁ, V. HLÁVKA, J. TACANO, M. TOITA, M.

Originální název

RTS Noise and quantum transitions in submicron MOSFETs

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

We compare two models of charge carrier capture and emission in silicon MOSFET, which is a source of RTS noise. In the SiO2 gate insulating layer and its interface with Si channel there is a high number of oxygen vacancies, creating localised states and traps. Electron exchange between channel and traps within several nanometers distance is given by tunnelling processes and leads to generation of 1/f noise. Two possible mechanisms of electron tunnelling are discussed and theoretical results are compared to experimental dependence of capture and emission parameters as a function of gate and drain voltage (electric field intensity) and temperature.

Klíčová slova

RTS noise, 1/f noise, MOSFET

Autoři

ŠIKULA, J.; PAVELKA, J.; SEDLÁKOVÁ, V.; HLÁVKA, J.; TACANO, M.; TOITA, M.

Rok RIV

2007

Vydáno

15. 11. 2007

Nakladatel

VUT

Místo

Brno

ISBN

978-80-7355-078-3

Kniha

New Trends in Physics

Strany od

138

Strany do

141

Strany počet

4

BibTex

@inproceedings{BUT27881,
  author="Josef {Šikula} and Jan {Pavelka} and Vlasta {Sedláková} and Jan {Hlávka} and Munecazu {Tacano} and Masato {Toita}",
  title="RTS Noise and quantum transitions in submicron MOSFETs",
  booktitle="New Trends in Physics",
  year="2007",
  pages="138--141",
  publisher="VUT",
  address="Brno",
  isbn="978-80-7355-078-3"
}