Detail publikace

RTS Noise and quantum transitions in submicron MOSFETs

Originální název

RTS Noise and quantum transitions in submicron MOSFETs

Anglický název

RTS Noise and quantum transitions in submicron MOSFETs

Jazyk

en

Originální abstrakt

We compare two models of charge carrier capture and emission in silicon MOSFET, which is a source of RTS noise. In the SiO2 gate insulating layer and its interface with Si channel there is a high number of oxygen vacancies, creating localised states and traps. Electron exchange between channel and traps within several nanometers distance is given by tunnelling processes and leads to generation of 1/f noise. Two possible mechanisms of electron tunnelling are discussed and theoretical results are compared to experimental dependence of capture and emission parameters as a function of gate and drain voltage (electric field intensity) and temperature.

Anglický abstrakt

We compare two models of charge carrier capture and emission in silicon MOSFET, which is a source of RTS noise. In the SiO2 gate insulating layer and its interface with Si channel there is a high number of oxygen vacancies, creating localised states and traps. Electron exchange between channel and traps within several nanometers distance is given by tunnelling processes and leads to generation of 1/f noise. Two possible mechanisms of electron tunnelling are discussed and theoretical results are compared to experimental dependence of capture and emission parameters as a function of gate and drain voltage (electric field intensity) and temperature.

BibTex


@inproceedings{BUT27881,
  author="Josef {Šikula} and Jan {Pavelka} and Vlasta {Sedláková} and Jan {Hlávka} and Munecazu {Tacano} and Masato {Toita}",
  title="RTS Noise and quantum transitions in submicron MOSFETs",
  annote="We compare two models of charge carrier capture and emission in silicon MOSFET, which is a source of RTS noise. In the SiO2 gate insulating layer and its interface with Si channel there is a high number of oxygen vacancies, creating localised states and traps. Electron exchange between channel and traps within several nanometers distance is given by tunnelling processes and leads to generation of 1/f noise. Two possible mechanisms of electron tunnelling are discussed and theoretical results are compared to experimental dependence of capture and emission parameters as a function of gate and drain voltage (electric field intensity) and temperature.",
  address="VUT",
  booktitle="New Trends in Physics",
  chapter="27881",
  institution="VUT",
  year="2007",
  month="november",
  pages="138--141",
  publisher="VUT",
  type="conference paper"
}