Detail publikace

Silicon-germanium heterojunction bipolar transistor: Simulation in Mathematica

Horák Michal, Hejátková Edita

Originální název

Silicon-germanium heterojunction bipolar transistor: Simulation in Mathematica

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The aim of this paper is to describe the simple simulation program developed for the student computer training in varous courses on semiconductor devices and structures. All calculations and graphical outputs are carried out in Mathematica.

Klíčová slova

SiGe, heterojunction bipolar transistor, simulation

Autoři

Horák Michal, Hejátková Edita

Rok RIV

2006

Vydáno

15. 9. 2006

Nakladatel

Ing. Zdeněk Novotný

Místo

Brno

ISBN

80-214-3246-2

Kniha

IMAPS EDS CS International Conference 2006 Proceedings

Strany od

360

Strany do

365

Strany počet

6

BibTex

@inproceedings{BUT24638,
  author="Michal {Horák} and Edita {Hejátková}",
  title="Silicon-germanium heterojunction bipolar transistor: Simulation in Mathematica",
  booktitle="IMAPS EDS CS International Conference 2006 Proceedings",
  year="2006",
  pages="6",
  publisher="Ing. Zdeněk Novotný",
  address="Brno",
  isbn="80-214-3246-2"
}