Detail publikace

Charge Carriers Transport and Noise in Niobium Oxide and Tantalum Capacitors

Originální název

Charge Carriers Transport and Noise in Niobium Oxide and Tantalum Capacitors

Anglický název

Charge Carriers Transport and Noise in Niobium Oxide and Tantalum Capacitors

Jazyk

en

Originální abstrakt

The NbO and Ta capacitor active region quality assessment is based on the evaluation of VA and noise characteristics and theirs temperature dependences. A physical model of a solid niobium and tantalum capacitor is based upon the metal-insulator–semiconductor (MIS) structure. For the normal mode and low electric field the current transport is described by the Poole-Frenkel mechanism and the current noise spectral density is given by the superposition of shot and g-r noise. For the high electric field the current transport is described by tunnelling and the current noise spectral density is 1/f type. Quantum transition diagram describing these mechanisms is shown. The leakage current temperature dependence for the low electric field gives the deep level activation energy Ea = 0.4 eV.

Anglický abstrakt

The NbO and Ta capacitor active region quality assessment is based on the evaluation of VA and noise characteristics and theirs temperature dependences. A physical model of a solid niobium and tantalum capacitor is based upon the metal-insulator–semiconductor (MIS) structure. For the normal mode and low electric field the current transport is described by the Poole-Frenkel mechanism and the current noise spectral density is given by the superposition of shot and g-r noise. For the high electric field the current transport is described by tunnelling and the current noise spectral density is 1/f type. Quantum transition diagram describing these mechanisms is shown. The leakage current temperature dependence for the low electric field gives the deep level activation energy Ea = 0.4 eV.

BibTex


@inproceedings{BUT24160,
  author="Josef {Šikula} and Vlasta {Sedláková} and Zdeněk {Sita}",
  title="Charge Carriers Transport and Noise in Niobium Oxide and Tantalum Capacitors",
  annote="The NbO and Ta capacitor active region quality assessment is based on the evaluation of VA and noise characteristics and theirs temperature dependences. A physical model of a solid niobium and tantalum capacitor is based upon the metal-insulator–semiconductor (MIS) structure. For the normal mode and low electric field the current transport is described by the Poole-Frenkel mechanism and the current noise spectral density is given by the superposition of shot and g-r noise. For the high electric field the current transport is described by tunnelling and the current noise spectral density is 1/f type. Quantum transition diagram describing these mechanisms is shown. The leakage current temperature dependence for the low electric field gives the deep level activation energy Ea = 0.4 eV.",
  address="Ing. Zdeněk Novotný CSc.",
  booktitle="EDS '06 IMAPS CS International Conference Proceedings",
  chapter="24160",
  institution="Ing. Zdeněk Novotný CSc.",
  year="2006",
  month="january",
  pages="154",
  publisher="Ing. Zdeněk Novotný CSc.",
  type="conference paper"
}