Detail publikace

Principle of Bulk-Driven MOS Transistor.

Originální název

Principle of Bulk-Driven MOS Transistor.

Anglický název

Principle of Bulk-Driven MOS Transistor.

Jazyk

en

Originální abstrakt

Recently, integrated circuit designers have been putting an increasing effort into the reduction of supply voltage and power dissipation of digital, analog and mixed circuits and systems. This is mainly due to the following factors. First of all, the need to reduce power consumption in modern high-density digital systems. As chip components get closer together, the problem of heat dissipation increases while break-down voltages of the components on chip reduce as geometries become smaller. Secondly, the explosive growth of the market of portable battery-operated electronics, which has stimulated the demand for LP topologies able to operate at reduced supplies and to ensure a longer battery lifetime. This paper suggests an elegant approach of Bulk-Driven MOS transistor to reduce the needed voltage supply.

Anglický abstrakt

Recently, integrated circuit designers have been putting an increasing effort into the reduction of supply voltage and power dissipation of digital, analog and mixed circuits and systems. This is mainly due to the following factors. First of all, the need to reduce power consumption in modern high-density digital systems. As chip components get closer together, the problem of heat dissipation increases while break-down voltages of the components on chip reduce as geometries become smaller. Secondly, the explosive growth of the market of portable battery-operated electronics, which has stimulated the demand for LP topologies able to operate at reduced supplies and to ensure a longer battery lifetime. This paper suggests an elegant approach of Bulk-Driven MOS transistor to reduce the needed voltage supply.

BibTex


@inproceedings{BUT21431,
  author="Fabian {Khateb} and Dalibor {Biolek} and Vladislav {Musil}",
  title="Principle of Bulk-Driven MOS Transistor.",
  annote="Recently, integrated circuit designers have been putting an increasing effort into the reduction of supply voltage and power dissipation of digital, analog and mixed circuits and systems. This is mainly due to the following factors. First of all, the need to reduce power consumption in modern high-density digital systems. As chip components get closer together, the problem of heat dissipation increases while break-down voltages of the components on chip reduce as geometries become smaller. Secondly, the explosive growth of the market of portable battery-operated electronics, which has stimulated the demand for LP topologies able to operate at reduced supplies and to ensure a longer battery lifetime. This paper suggests an elegant approach of Bulk-Driven MOS transistor to reduce the needed voltage supply.",
  address="Izhevsk State Technical University",
  booktitle="Technical Universities: Integration with European and World Education Systems",
  chapter="21431",
  institution="Izhevsk State Technical University",
  year="2006",
  month="april",
  pages="187",
  publisher="Izhevsk State Technical University",
  type="conference paper"
}