Detail publikace

Reactive magnetron sputtering silicon nitride layer for passivation of solar cells

HÉGR, O.

Originální název

Reactive magnetron sputtering silicon nitride layer for passivation of solar cells

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

In our work we deal with SiNX and SiO2 layers deposited by means of reactive magnetron sputtering on the different crystalline silicone surfaces. The aim of work is evaluation of both surface recombination and optical properties of this layers and their comparison with standard solar cells made by Solartec company (Czech republic). Silicon oxide layer (10 – 20 nm) created before silicon nitride layer (70 – 80nm) deposition leads to further decrease of surface defects. Reactive magnetron sputtering eliminate high-temperature stress in deposition process of silicon nitride and silicon dioxide. In this process is possible to obtain comparatively high deposition rate (even to 10 nm/min for SiNx).

Klíčová slova

solar cell, passivation layer, reactive magnetron sputtering, silicon nitride, silicon dioxide

Autoři

HÉGR, O.

Rok RIV

2006

Vydáno

1. 1. 2006

Nakladatel

Ing. Zdeněk Novotný CSc., Ondráčkova 105, Brno

ISBN

80-214-3162-8

Kniha

Proceedings of the 12th Conference STUDENT EEICT 2006 Volume 3

Číslo edice

1

Strany od

171

Strany do

174

Strany počet

4

BibTex

@inproceedings{BUT19634,
  author="Ondřej {Hégr}",
  title="Reactive magnetron sputtering silicon nitride layer for passivation of solar cells",
  booktitle="Proceedings of the 12th Conference STUDENT EEICT 2006 Volume 3",
  year="2006",
  volume="1",
  number="1",
  pages="4",
  publisher="Ing. Zdeněk Novotný CSc., Ondráčkova 105, Brno",
  isbn="80-214-3162-8"
}