Detail publikace

1/f noise in submicron MOSFETs

HAVRÁNEK, J., SEDLÁK, P.

Originální název

1/f noise in submicron MOSFETs

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The objectives of this paper are experimental investigations of the nature of the 1/f noise, if the source is mobile carrier number fluctuations or a fluctuation in the mobility. Experiments were performed in low frequency range, where the 1/f noise for submicron structures as MOSFETs and HEMTs is dominant. There are a low number of carriers in the active volume of those nanoscale devices; therefore it is supposed that 1/f noise will be dominant. Thus new valuable experimental results of noise spectral density and its relation like charge carriers mean free path, mobility, dependence on temperature and electric field inten-sity will be obtained.

Klíčová slova v angličtině

1/f noise, reliability and lifetime of electronic devices, noise spectral density

Autoři

HAVRÁNEK, J., SEDLÁK, P.

Rok RIV

2006

Vydáno

1. 4. 2006

Nakladatel

Vienna Universtity of Technology

Místo

Vienna

ISBN

3-902463-05-8

Kniha

Junior Scientist Conference

Strany od

121

Strany do

122

Strany počet

2

BibTex

@inproceedings{BUT18420,
  author="Jan {Havránek} and Petr {Sedlák}",
  title="1/f noise in submicron MOSFETs",
  booktitle="Junior Scientist Conference",
  year="2006",
  pages="2",
  publisher="Vienna Universtity of Technology",
  address="Vienna",
  isbn="3-902463-05-8"
}