Detail publikace

Aluminum Nitride with High d33 Piezoelectric Coefficient for MEMS Applications

PEKÁREK, J. GABLECH, I. KLEMPA, J. SVATOŠ, V. SCHNEIDER, M. NEUŽIL, P.

Originální název

Aluminum Nitride with High d33 Piezoelectric Coefficient for MEMS Applications

Anglický název

Aluminum Nitride with High d33 Piezoelectric Coefficient for MEMS Applications

Jazyk

en

Originální abstrakt

We proposed and demonstrated a preparation method of (001) preferentially oriented stress-free AlN piezoelectric thin films with high d33 piezoelectric coefficient for microelectromechanical systems (MEMS) applications. We used dual Kaufman ion-beam source setup in configuration for reactive sputtering method of AlN thin films. Such AlN was prepared in temperature range between 100 °C and 330 °C. AlN thin films were deposited on Si (100), Si (111), amorphous SiO2, and a (001) preferentially oriented Ti thin film. We compared their crystallographic and piezoelectric properties. We found out, that the highest crystallographic quality was reached for AlN thin films deposited on (001) preferentially oriented Ti thin films. The well optimized AlN thin film without residual stress reached the d33 value = (7.33 ± 0.08) pC·N−1. It means that such way used for AlN fabrication at low temperature is well suitable for preparation of piezoelectric layer for MEMS and complementary metal-oxide-semiconductor technologies involving integrated circuits. This AlN can be used for sensors as well as actuators.

Anglický abstrakt

We proposed and demonstrated a preparation method of (001) preferentially oriented stress-free AlN piezoelectric thin films with high d33 piezoelectric coefficient for microelectromechanical systems (MEMS) applications. We used dual Kaufman ion-beam source setup in configuration for reactive sputtering method of AlN thin films. Such AlN was prepared in temperature range between 100 °C and 330 °C. AlN thin films were deposited on Si (100), Si (111), amorphous SiO2, and a (001) preferentially oriented Ti thin film. We compared their crystallographic and piezoelectric properties. We found out, that the highest crystallographic quality was reached for AlN thin films deposited on (001) preferentially oriented Ti thin films. The well optimized AlN thin film without residual stress reached the d33 value = (7.33 ± 0.08) pC·N−1. It means that such way used for AlN fabrication at low temperature is well suitable for preparation of piezoelectric layer for MEMS and complementary metal-oxide-semiconductor technologies involving integrated circuits. This AlN can be used for sensors as well as actuators.

Dokumenty

BibTex


@inproceedings{BUT167302,
  author="Jan {Pekárek} and Imrich {Gablech} and Jaroslav {Klempa} and Vojtěch {Svatoš} and Michael {Schneider} and Pavel {Neužil}",
  title="Aluminum Nitride with High d33 Piezoelectric Coefficient for MEMS Applications",
  annote="We proposed and demonstrated a preparation method of (001) preferentially oriented stress-free AlN piezoelectric thin films with high d33 piezoelectric coefficient for microelectromechanical systems (MEMS) applications. We used dual Kaufman ion-beam source setup in configuration for reactive sputtering method of AlN thin films. Such AlN was prepared in temperature range between 100 °C and 330 °C. AlN thin films were deposited on Si (100), Si (111), amorphous SiO2, and a (001) preferentially oriented Ti thin film. We compared their crystallographic and piezoelectric properties.
We found out, that the highest crystallographic quality was reached for AlN thin films deposited on (001) preferentially oriented Ti thin films. The well optimized AlN thin film without residual stress reached the d33 value = (7.33 ± 0.08) pC·N−1. It means that such way used for AlN fabrication at low temperature is well suitable for preparation of piezoelectric layer for MEMS and complementary metal-oxide-semiconductor technologies involving integrated circuits. This AlN can be used for sensors as well as actuators.",
  address="IEEE",
  booktitle="19th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (Power MEMS)  Conference Proceedings",
  chapter="167302",
  howpublished="online",
  institution="IEEE",
  year="2019",
  month="december",
  pages="1--4",
  publisher="IEEE",
  type="conference paper"
}