Detail publikace

Aluminum nitride based piezoelectric harvesters

GABLECH, I. KLEMPA, J. PEKÁREK, J. VYROUBAL, P. KUNZ, J. NEUŽIL, P.

Originální název

Aluminum nitride based piezoelectric harvesters

Anglický název

Aluminum nitride based piezoelectric harvesters

Jazyk

en

Originální abstrakt

This work demonstrates the fabrication of simple of AlN-based piezoelectric energy harvesters (PEH), made of cantilevers with thin films prepared by ion beam-assisted deposition. The preferentially (001) orientated AlN thin films have exceptionally high piezoelectric coefficients of (7.33 +/- 0.08) pC.N-1. The fabrication of PEH was done using only three lithography steps, employing conventional silicon substrate with precise control of the cantilever and it's mass thicknesses. The AlN deposition was done at a temperature of approximate to 330 degrees C which makes it compatible with complementary metal oxide semiconductor technology (CMOS). The PEH cantilever deflection and efficiency were characterized using both laser interferometry and a vibration shaker, respectively. This technology could become useful for future CMOS-based energy harvesters integrated on chip with circuits.

Anglický abstrakt

This work demonstrates the fabrication of simple of AlN-based piezoelectric energy harvesters (PEH), made of cantilevers with thin films prepared by ion beam-assisted deposition. The preferentially (001) orientated AlN thin films have exceptionally high piezoelectric coefficients of (7.33 +/- 0.08) pC.N-1. The fabrication of PEH was done using only three lithography steps, employing conventional silicon substrate with precise control of the cantilever and it's mass thicknesses. The AlN deposition was done at a temperature of approximate to 330 degrees C which makes it compatible with complementary metal oxide semiconductor technology (CMOS). The PEH cantilever deflection and efficiency were characterized using both laser interferometry and a vibration shaker, respectively. This technology could become useful for future CMOS-based energy harvesters integrated on chip with circuits.

Dokumenty

BibTex


@inproceedings{BUT166135,
  author="Imrich {Gablech} and Jaroslav {Klempa} and Jan {Pekárek} and Petr {Vyroubal} and Jan {Kunz} and Pavel {Neužil}",
  title="Aluminum nitride based piezoelectric harvesters",
  annote="This work demonstrates the fabrication of simple of AlN-based piezoelectric energy harvesters (PEH), made of cantilevers with thin films prepared by ion beam-assisted deposition. The preferentially (001) orientated AlN thin films have exceptionally high piezoelectric coefficients of (7.33 +/- 0.08) pC.N-1. The fabrication of PEH was done using only three lithography steps, employing conventional silicon substrate with precise control of the cantilever and it's mass thicknesses. The AlN deposition was done at a temperature of approximate to 330 degrees C which makes it compatible with complementary metal oxide semiconductor technology (CMOS). The PEH cantilever deflection and efficiency were characterized using both laser interferometry and a vibration shaker, respectively. This technology could become useful for future CMOS-based energy harvesters integrated on chip with circuits.",
  address="IEEE",
  booktitle="19th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (Power MEMS)  Conference Proceedings",
  chapter="166135",
  howpublished="online",
  institution="IEEE",
  year="2019",
  month="december",
  pages="1--4",
  publisher="IEEE",
  type="conference paper"
}