Detail publikace

Tantalum and Niobium Capacitors: Technology and Characteristic Parameters Comparison

Originální název

Tantalum and Niobium Capacitors: Technology and Characteristic Parameters Comparison

Anglický název

Tantalum and Niobium Capacitors: Technology and Characteristic Parameters Comparison

Jazyk

en

Originální abstrakt

The comparison of technology, conductivity mechanisms, capacitance and their activation energies is performed for NbO and Ta capacitors. Va caracteristics in normal and reverse mode at room and elevated temperatures have been measured and MIS structure characteristics have been evaluated.

Anglický abstrakt

The comparison of technology, conductivity mechanisms, capacitance and their activation energies is performed for NbO and Ta capacitors. Va caracteristics in normal and reverse mode at room and elevated temperatures have been measured and MIS structure characteristics have been evaluated.

BibTex


@inproceedings{BUT16509,
  author="Josef {Šikula} and Vlasta {Sedláková} and Jan {Hlávka} and Pavel {Höschel} and Roman {Grill} and Zdeněk {Sita} and Tomáš {Zedníček}",
  title="Tantalum and Niobium Capacitors: Technology and Characteristic Parameters Comparison",
  annote="The comparison of technology, conductivity mechanisms, capacitance and their activation energies is performed for NbO and Ta capacitors. Va caracteristics in normal and reverse mode at room and elevated temperatures have been measured and MIS structure characteristics have been evaluated.",
  address="IMAPS Benelux",
  booktitle="15th European Microelectronics and Packaging Conference Proceedings",
  chapter="16509",
  institution="IMAPS Benelux",
  year="2005",
  month="january",
  pages="540",
  publisher="IMAPS Benelux",
  type="conference paper"
}