Detail publikace

RTS in Submicron MOSFETs: High Field Effects

Originální název

RTS in Submicron MOSFETs: High Field Effects

Anglický název

RTS in Submicron MOSFETs: High Field Effects

Jazyk

en

Originální abstrakt

A systematic analysis of two level RTS signal was made to obtain information on capture and emission processes as a function of gate voltage, drain current and temperature for low and high lateral electric field.

Anglický abstrakt

A systematic analysis of two level RTS signal was made to obtain information on capture and emission processes as a function of gate voltage, drain current and temperature for low and high lateral electric field.

BibTex


@inproceedings{BUT16493,
  author="Jan {Pavelka} and Vlasta {Sedláková} and Josef {Šikula} and Jan {Havránek} and Munecazu {Tacano} and Sumihisa {Hashiguchi} and Masato {Toita}",
  title="RTS in Submicron MOSFETs: High Field Effects",
  annote="A systematic analysis of two level RTS signal was made to obtain information on capture and emission processes as a function of gate voltage, drain current and temperature for low and high lateral electric field.",
  address="University of Salamanca",
  booktitle="Noise and Fluctuations, 18th International Conference on Noise and Fluctuations - ICNF 2005, AIP Conference Proceedings 780",
  chapter="16493",
  institution="University of Salamanca",
  year="2005",
  month="january",
  pages="339",
  publisher="University of Salamanca",
  type="conference paper"
}