Detail publikace

Depozice pasivačních vrstev SiNx a SiO2.

HÉGR, O. BOUŠEK, J.

Originální název

Depozice pasivačních vrstev SiNx a SiO2.

Anglický název

Deposition of SiNx and SiO2 passivation layers.

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

čeština

Originální abstrakt

In the semiconductor and photovoltaic application, the surface passivation is a very important process for adjustment of silicon surface properties. It brings reduction of recombination centers that arise from previous technology steps. The surface recombination is decreased and the effective lifetime is increased. For passivation layers deposition more methods are possible. The most important method is PECVD (Plasma-Enhanced Chemical Vapor Deposition) and LPCVD (Low-Pressure Chemical Vapor Deposition). In this paper, deposition of the passivation layers by means of reactive magnetron sputtering is dealt.

Anglický abstrakt

In the semiconductor and photovoltaic application, the surface passivation is a very important process for adjustment of silicon surface properties. It brings reduction of recombination centers that arise from previous technology steps. The surface recombination is decreased and the effective lifetime is increased. For passivation layers deposition more methods are possible. The most important method is PECVD (Plasma-Enhanced Chemical Vapor Deposition) and LPCVD (Low-Pressure Chemical Vapor Deposition). In this paper, deposition of the passivation layers by means of reactive magnetron sputtering is dealt.

Klíčová slova

povrchová pasivace, solární články, depozice SiN

Klíčová slova v angličtině

surface passivation, deposition

Autoři

HÉGR, O.; BOUŠEK, J.

Rok RIV

2005

Vydáno

12. 12. 2005

Nakladatel

nakl. Z. Novotný

Místo

Brno

ISBN

80-214-3116-4

Kniha

Mikrosyn. Nové trendy v mikroelektronických systémech a nanotechnologiích

Číslo edice

1

Strany od

111

Strany do

116

Strany počet

6

BibTex

@inproceedings{BUT16434,
  author="Ondřej {Hégr} and Jaroslav {Boušek}",
  title="Depozice pasivačních vrstev SiNx a SiO2.",
  booktitle="Mikrosyn. Nové trendy v mikroelektronických systémech a nanotechnologiích",
  year="2005",
  volume="2005",
  number="1",
  pages="6",
  publisher="nakl. Z. Novotný",
  address="Brno",
  isbn="80-214-3116-4"
}