Detail publikace

Electroforming in Metal-Oxide Memristive Synapses

WANG, T. SHI, Y. PUGLISI, F. M. CHEN, S. ZHU, K. ZOU, Y. LI, X. JING, X. HAN, T. GUO, B. BUKVIŠOVÁ, K. KACHTÍK, L. KOLÍBAL, M. WEN, CH. LANZA, M.

Originální název

Electroforming in Metal-Oxide Memristive Synapses

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

Memristors have shown an extraordinary potential to emulate the plastic and dynamic electrical behaviors of biological synapses and have been already used to construct neuromorphic systems with in-memory computing and unsupervised learning capabilities; moreover, the small size and simple fabrication process of memristors make them ideal candidates for ultradense configurations. So far, the properties of memristive electronic synapses (i.e., potentiation/depression, relaxation, linearity) have been extensively analyzed by several groups. However, the dynamics of electroforming in memristive devices, which defines the position, size, shape, and chemical composition of the conductive nanofilaments across the device, has not been analyzed in depth. By applying ramped voltage stress (RVS), constant voltage stress (CVS), and pulsed voltage stress (PVS), we found that electroforming is highly affected by the biasing methods applied. We also found that the technique used to deposit the oxide, the chemical composition of the adjacent metal electrodes, and the polarity of the electrical stimuli applied have important effects on the dynamics of the electroforming process and in subsequent post-electroforming bipolar resistive switching. This work should be of interest to designers of memristive neuromorphic systems and could open the door for the implementation of new bioinspired functionalities into memristive neuromorphic systems.

Klíčová slova

Oxides; Gold Electrodes; Atomic layer deposition; Transmission electron microscopy

Autoři

WANG, T.; SHI, Y.; PUGLISI, F. M.; CHEN, S.; ZHU, K.; ZOU, Y.; LI, X.; JING, X.; HAN, T.; GUO, B.; BUKVIŠOVÁ, K.; KACHTÍK, L.; KOLÍBAL, M.; WEN, CH.; LANZA, M.

Vydáno

11. 3. 2020

ISSN

1944-8252

Periodikum

ACS applied materials & interfaces

Ročník

12

Číslo

10

Stát

Spojené státy americké

Strany od

11806

Strany do

11814

Strany počet

9

URL

https://pubs.acs.org/doi/10.1021/acsami.9b19362

BibTex

@article{BUT162730,
  author="WANG, T. and SHI, Y. and PUGLISI, F. M. and CHEN, S. and ZHU, K. and ZOU, Y. and LI, X. and JING, X. and HAN, T. and GUO, B. and BUKVIŠOVÁ, K. and KACHTÍK, L. and KOLÍBAL, M. and WEN, CH. and LANZA, M.",
  title="Electroforming in Metal-Oxide Memristive Synapses",
  journal="ACS applied materials & interfaces",
  year="2020",
  volume="12",
  number="10",
  pages="11806--11814",
  doi="10.1021/acsami.9b19362",
  issn="1944-8252",
  url="https://pubs.acs.org/doi/10.1021/acsami.9b19362"
}