Detail publikace

Simple and efficient AlN-based piezoelectric energy harvesters

GABLECH, I. KLEMPA, J. PEKÁREK, J. VYROUBAL, P. HRABINA, J. HOLÁ, M. KUNZ, J. BRODSKÝ, J. NEUŽIL, P.

Originální název

Simple and efficient AlN-based piezoelectric energy harvesters

Anglický název

Simple and efficient AlN-based piezoelectric energy harvesters

Jazyk

en

Originální abstrakt

In this work, we demonstrate the simple fabrication process of AlN-based piezoelectric energy harvesters (PEH), which are made of cantilevers consisting of a multilayer ion beam-assisted deposition. The preferentially (001) orientated AlN thin films possess exceptionally high piezoelectric coefficients d33 of (7.33 ± 0.08) pC∙N−1. The fabrication of PEH was completed using just three lithography steps, conventional silicon substrate with full control of the cantilever thickness, in addition to the thickness of the proof mass. As the AlN deposition was conducted at a temperature of ≈ 330 °C, the process can be implemented into standard complementary metal oxide semiconductor (CMOS) technology, as well as the CMOS wafer post-processing. The PEH cantilever deflection and efficiency were characterized using both laser interferometry, and a vibration shaker, respectively. This technology could become a core feature for future CMOS-based energy harvesters.

Anglický abstrakt

In this work, we demonstrate the simple fabrication process of AlN-based piezoelectric energy harvesters (PEH), which are made of cantilevers consisting of a multilayer ion beam-assisted deposition. The preferentially (001) orientated AlN thin films possess exceptionally high piezoelectric coefficients d33 of (7.33 ± 0.08) pC∙N−1. The fabrication of PEH was completed using just three lithography steps, conventional silicon substrate with full control of the cantilever thickness, in addition to the thickness of the proof mass. As the AlN deposition was conducted at a temperature of ≈ 330 °C, the process can be implemented into standard complementary metal oxide semiconductor (CMOS) technology, as well as the CMOS wafer post-processing. The PEH cantilever deflection and efficiency were characterized using both laser interferometry, and a vibration shaker, respectively. This technology could become a core feature for future CMOS-based energy harvesters.

Plný text v Digitální knihovně

http://hdl.handle.net/11012/186577

Dokumenty

BibTex 


@article{BUT161587,
  author="Imrich {Gablech} and Jaroslav {Klempa} and Jan {Pekárek} and Petr {Vyroubal} and Jan {Hrabina} and Miroslava {Holá} and Jan {Kunz} and Jan {Brodský} and Pavel {Neužil}",
  title="Simple and efficient AlN-based piezoelectric energy harvesters",
  annote="In this work, we demonstrate the simple fabrication process of AlN-based piezoelectric energy harvesters (PEH), which are made of cantilevers consisting of a multilayer ion beam-assisted deposition. The preferentially (001) orientated AlN thin films possess exceptionally high piezoelectric coefficients d33 of (7.33 ± 0.08) pC∙N−1. The fabrication of PEH was completed using just three lithography steps, conventional silicon substrate with full control of the cantilever thickness, in addition to the thickness of the proof mass. As the AlN deposition was conducted at a temperature of ≈ 330 °C, the process can be implemented into standard complementary metal oxide semiconductor (CMOS) technology, as well as the CMOS wafer post-processing. The PEH cantilever deflection and efficiency were characterized using both laser interferometry, and a vibration shaker, respectively. This technology could become a core feature for future CMOS-based energy harvesters.",
  address="MDPI",
  chapter="161587",
  doi="10.3390/mi11020143",
  howpublished="online",
  institution="MDPI",
  number="2",
  volume="11",
  year="2020",
  month="january",
  pages="1--10",
  publisher="MDPI",
  type="journal article in Web of Science"
}