Detail publikace

Low temperature selective growth of GaN single crystals on pre-patterned Si substrates

MACH, J. PIASTEK, J. MANIŠ, J. ČALKOVSKÝ, V. ŠAMOŘIL, T. FLAJŠMANOVÁ, J. BARTOŠÍK, M. VOBORNÝ, S. KONEČNÝ, M. ŠIKOLA, T.

Originální název

Low temperature selective growth of GaN single crystals on pre-patterned Si substrates

Anglický název

Low temperature selective growth of GaN single crystals on pre-patterned Si substrates

Jazyk

en

Originální abstrakt

We report on a hybrid method for fabrication of arrays of GaN nanocrystals by low-temperature UHV selective growth on pre-patterned silicon substrates covered by native oxide. Patterning of the substrates was performed by using a gallium focused ion beam (FIB). To get GaN nanocrystals at specific positions, Ga droplets were created at FIB patterned sites by evaporation of Ga atoms at 280°C substrate temperature first, and then modified by their post-nitridation using an ultra-low energy (50eV) nitrogen ion–beam at a sample temperature of 200 °C. To get larger arrays of GaN nanocrystals (≈150nm and 200nm in diameter), such a sequential process was repeated in several cycles at slightly modified operation conditions. The quality of the nanocrystals was checked by measurement of their photoluminescence properties which proved the occurrence of the peak of a band edge emission at around 367nm (3.38 eV).

Anglický abstrakt

We report on a hybrid method for fabrication of arrays of GaN nanocrystals by low-temperature UHV selective growth on pre-patterned silicon substrates covered by native oxide. Patterning of the substrates was performed by using a gallium focused ion beam (FIB). To get GaN nanocrystals at specific positions, Ga droplets were created at FIB patterned sites by evaporation of Ga atoms at 280°C substrate temperature first, and then modified by their post-nitridation using an ultra-low energy (50eV) nitrogen ion–beam at a sample temperature of 200 °C. To get larger arrays of GaN nanocrystals (≈150nm and 200nm in diameter), such a sequential process was repeated in several cycles at slightly modified operation conditions. The quality of the nanocrystals was checked by measurement of their photoluminescence properties which proved the occurrence of the peak of a band edge emission at around 367nm (3.38 eV).

Dokumenty

BibTex


@article{BUT161424,
  author="Jindřich {Mach} and Jakub {Piastek} and Jaroslav {Maniš} and Vojtěch {Čalkovský} and Tomáš {Šamořil} and Jana {Flajšmanová} and Miroslav {Bartošík} and Stanislav {Voborný} and Martin {Konečný} and Tomáš {Šikola}",
  title="Low temperature selective growth of GaN single crystals on pre-patterned Si substrates",
  annote="We report on a hybrid method for fabrication of arrays of GaN nanocrystals by low-temperature UHV selective growth on pre-patterned silicon substrates covered by native oxide. Patterning of the substrates was performed by using a gallium focused ion beam (FIB). To get GaN nanocrystals at specific positions, Ga droplets were created at FIB patterned sites by evaporation of Ga atoms at 280°C substrate temperature first, and then modified by their post-nitridation using an ultra-low energy (50eV) nitrogen ion–beam at a sample temperature of 200 °C. To get larger arrays of GaN nanocrystals (≈150nm and 200nm in diameter), such a sequential process was repeated in several cycles at slightly modified operation conditions. The quality of the nanocrystals was checked by measurement of their photoluminescence properties which proved the occurrence of the peak of a band edge emission at around 367nm (3.38 eV).",
  chapter="161424",
  doi="10.1016/j.apsusc.2019.143705",
  howpublished="online",
  number="143705",
  volume="497",
  year="2019",
  month="august",
  pages="1--7",
  type="journal article in Web of Science"
}