Detail publikace

0.5 V Sixth-order Chebyshev band-pass filter based on multiple-input bulk-driven OTA

Originální název

0.5 V Sixth-order Chebyshev band-pass filter based on multiple-input bulk-driven OTA

Anglický název

0.5 V Sixth-order Chebyshev band-pass filter based on multiple-input bulk-driven OTA

Jazyk

en

Originální abstrakt

This paper presents a low-voltage sixth-order Chebyshev band-pass filter based on multiple-input operational transconductance amplifier (MI-OTA). The used voltage supply is 0.5 V and the filter employs six MI-OTAs and six capacitors. The third intermodulation distortion (3rd IMD) is below 1 % for input sine wave signal with peak-to-peak up to rail-to-rail while the dynamic range (DR) is 66.8 dB. In order to insure low-voltage operation capability, extended linear range, increased voltage gain of the MI-OTA, the multiple-input bulk-driven transistor (MIBD) along with self-cascode techniques have been used. As a result, the proposed MI-OTA based on MIBD is capable to work with 0.5 V supply voltage and consumes power in the range of (2.5 to 1.2E3) nW for tunable bias current in the range from 1 nA to 500 nA. The MI-OTA and the filter circuits were designed and simulated in Cadence/Spectre environment using 0.18 µm CMOS process from TSMC. The simulation results agree well with theory and confirm the filter functionality.

Anglický abstrakt

This paper presents a low-voltage sixth-order Chebyshev band-pass filter based on multiple-input operational transconductance amplifier (MI-OTA). The used voltage supply is 0.5 V and the filter employs six MI-OTAs and six capacitors. The third intermodulation distortion (3rd IMD) is below 1 % for input sine wave signal with peak-to-peak up to rail-to-rail while the dynamic range (DR) is 66.8 dB. In order to insure low-voltage operation capability, extended linear range, increased voltage gain of the MI-OTA, the multiple-input bulk-driven transistor (MIBD) along with self-cascode techniques have been used. As a result, the proposed MI-OTA based on MIBD is capable to work with 0.5 V supply voltage and consumes power in the range of (2.5 to 1.2E3) nW for tunable bias current in the range from 1 nA to 500 nA. The MI-OTA and the filter circuits were designed and simulated in Cadence/Spectre environment using 0.18 µm CMOS process from TSMC. The simulation results agree well with theory and confirm the filter functionality.

BibTex


@article{BUT158817,
  author="Fabian {Khateb}",
  title="0.5 V Sixth-order Chebyshev band-pass filter based on multiple-input bulk-driven OTA",
  annote="This paper presents a low-voltage sixth-order Chebyshev band-pass filter based on multiple-input operational transconductance amplifier (MI-OTA). The used voltage supply is 0.5 V and the filter employs six MI-OTAs and six capacitors. The third intermodulation distortion (3rd IMD) is below 1 % for input sine wave signal with peak-to-peak up to rail-to-rail while the dynamic range (DR) is 66.8 dB. In order to insure low-voltage operation capability, extended linear range, increased voltage gain of the MI-OTA, the multiple-input bulk-driven transistor (MIBD) along with self-cascode techniques have been used. As a result, the proposed MI-OTA based on MIBD is capable to work with 0.5 V supply voltage and consumes power in the range of (2.5 to 1.2E3) nW for tunable bias current in the range from 1 nA to 500 nA. The MI-OTA and the filter circuits were designed and simulated in Cadence/Spectre environment using 0.18 µm CMOS process from TSMC. The simulation results agree well with theory and confirm the filter functionality.",
  address="ELSEVIER GMBH, URBAN & FISCHER VERLAG",
  chapter="158817",
  doi="10.1016/j.aeue.2019.152930",
  howpublished="print",
  institution="ELSEVIER GMBH, URBAN & FISCHER VERLAG",
  number=", IF: 2.853",
  volume="111",
  year="2019",
  month="october",
  pages="1--6",
  publisher="ELSEVIER GMBH, URBAN & FISCHER VERLAG",
  type="journal article in Web of Science"
}