Detail publikace

Stereometric Analysis of Effects of Heat Stressing on Micromorphology of Si Single Crystals

DALLAEV, R. STACH, S. TALU, S. SOBOLA, D. MÉNDEZ-ALBORES, A. TREJO, G. GRMELA, L.

Originální název

Stereometric Analysis of Effects of Heat Stressing on Micromorphology of Si Single Crystals

Typ

článek v časopise ve Scopus, Jsc

Jazyk

angličtina

Originální abstrakt

The purpose of this work is study of silicon single crystal wafer thermal stability in correlation with three-dimensional (3D) surfacecharacterization using atomic force microscopy (AFM). The samples were heated up to 500 °C for the period of 2 and 4 h. Then thesurfaces of wafers were processed by ion beam. The difference in surface structure of processed and reference samples wasinvestigated. Structural and compositional studies are provided by X-ray photoelectron spectroscopy. Stereometric analysis wascarried out on the basis of AFM-data, for stressed and unstressed samples. The results of stereometric analysis show the correlationof statistical characteristics of surface topography and structure of surface and near-surface area. Characterization techniques incombination with data processing methodology are essential for description of the surface condition. All the extracted topographicparameters and texture features have demonstrated a deeper analysis that can be used for new micro-topography models. (PDF) Stereometric Analysis of Effects of Heat Stressing on Micromorphology of Si Single Crystals.

Klíčová slova

Atomic force microscopy, Si single crystal wafers, Stereometric analysis, Topography, X-ray photoelectron spectroscopy

Autoři

DALLAEV, R.; STACH, S.; TALU, S.; SOBOLA, D.; MÉNDEZ-ALBORES, A.; TREJO, G.; GRMELA, L.

Vydáno

26. 1. 2019

Nakladatel

Springer

ISSN

1876-990X

Periodikum

Silicon

Ročník

11

Číslo

1

Stát

Nizozemsko

Strany od

1

Strany do

15

Strany počet

15

URL

https://link.springer.com/article/10.1007/s12633-019-0085-4

BibTex

@article{BUT155249,
  author="Rashid {Dallaev} and Sebastian {Stach} and Stefan {Talu} and Dinara {Sobola} and Alia {Méndez-Albores} and Gabriel {Trejo} and Lubomír {Grmela}",
  title="Stereometric Analysis of Effects of Heat Stressing on Micromorphology of Si Single Crystals",
  journal="Silicon",
  year="2019",
  volume="11",
  number="1",
  pages="1--15",
  doi="10.1007/s12633-019-0085-4",
  issn="1876-990X",
  url="https://link.springer.com/article/10.1007/s12633-019-0085-4"
}