Detail publikace

Surface morphology after reactive ion etching of silicon and gallium arsenide based solar cells

PAPEŽ, N. SOBOLA, D. GAJDOŠ, A. ŠKVARENINA, Ľ. MACKŮ, R. ELIÁŠ, M. NEBOJSA, A. MOTÚZ, R.

Originální název

Surface morphology after reactive ion etching of silicon and gallium arsenide based solar cells

Anglický název

Surface morphology after reactive ion etching of silicon and gallium arsenide based solar cells

Jazyk

en

Originální abstrakt

This work aims to study the surface morphology of solar cells before and after reactive ion etching (RIE) at two different pressures. Two types of solar cell based on GaAs and polycrystalline Si were processed and compared. The Scanning Electron Microscope (SEM) with the Energy Dispersive X-ray spectroscopy (EDX) was used for analysis of the samples. Raman spectroscopy showed a structural fingerprint of materials before and after processing. Atomic Force Microscope (AFM) demonstrated dimensional topography with high resolution. Optical spectrometer detected changing of reflectance the samples. Experimentally, it has been confirmed that GaAs solar cells have a very high endurance to ion bombardment in comparison to Si cells.

Anglický abstrakt

This work aims to study the surface morphology of solar cells before and after reactive ion etching (RIE) at two different pressures. Two types of solar cell based on GaAs and polycrystalline Si were processed and compared. The Scanning Electron Microscope (SEM) with the Energy Dispersive X-ray spectroscopy (EDX) was used for analysis of the samples. Raman spectroscopy showed a structural fingerprint of materials before and after processing. Atomic Force Microscope (AFM) demonstrated dimensional topography with high resolution. Optical spectrometer detected changing of reflectance the samples. Experimentally, it has been confirmed that GaAs solar cells have a very high endurance to ion bombardment in comparison to Si cells.

Dokumenty

BibTex


@article{BUT151859,
  author="Nikola {Papež} and Dinara {Sobola} and Adam {Gajdoš} and Ľubomír {Škvarenina} and Robert {Macků} and Marek {Eliáš} and Alois {Nebojsa} and Rastislav {Motúz}",
  title="Surface morphology after reactive ion etching of silicon and gallium arsenide based solar cells",
  annote="This work aims to study the surface morphology of solar cells before and after reactive ion etching (RIE) at two different pressures. Two types of solar cell based on GaAs and polycrystalline Si were processed and compared. The Scanning Electron Microscope (SEM) with the Energy Dispersive X-ray spectroscopy (EDX) was used for analysis of the samples. Raman spectroscopy showed a structural fingerprint of materials before and after processing. Atomic Force Microscope (AFM) demonstrated dimensional topography with high resolution. Optical spectrometer detected changing of reflectance the samples. Experimentally, it has been confirmed that GaAs solar cells have a very high endurance to ion bombardment in comparison to Si cells.",
  address="IOP Publishing Ltd",
  booktitle="Journal of Physics: Conference Series",
  chapter="151859",
  doi="10.1088/1742-6596/1124/4/041015",
  howpublished="online",
  institution="IOP Publishing Ltd",
  number="4",
  volume="1124",
  year="2018",
  month="december",
  pages="165--171",
  publisher="IOP Publishing Ltd",
  type="journal article in Scopus"
}