Detail publikace

About v-i Pinched Hysteresis of Some Non-Memristive Systems

Originální název

About v-i Pinched Hysteresis of Some Non-Memristive Systems

Anglický název

About v-i Pinched Hysteresis of Some Non-Memristive Systems

Jazyk

en

Originální abstrakt

A special subset of two-terminal elements providing pinched hysteresis loops in the voltage-current plane with the lobe area increasing with the frequency is analysed. These devices are identified as non-memristive systems and the sufficient condition for their hysteresis loop to be pinched at the origin is derived. It turns out that the analysed behaviour can be observed only for just one concrete initial state of the device. This knowledge is conclusive for understanding why such devices cannot be regarded as memristors.

Anglický abstrakt

A special subset of two-terminal elements providing pinched hysteresis loops in the voltage-current plane with the lobe area increasing with the frequency is analysed. These devices are identified as non-memristive systems and the sufficient condition for their hysteresis loop to be pinched at the origin is derived. It turns out that the analysed behaviour can be observed only for just one concrete initial state of the device. This knowledge is conclusive for understanding why such devices cannot be regarded as memristors.

BibTex


@article{BUT150098,
  author="Dalibor {Biolek} and Zdeněk {Biolek} and Viera {Biolková} and Alon {Ascoli} and Ronald {Tetzlaff}",
  title="About v-i Pinched Hysteresis of Some Non-Memristive Systems",
  annote="A special subset of two-terminal elements providing pinched hysteresis loops in the voltage-current plane with the lobe area increasing with the frequency is analysed. These devices are identified as non-memristive systems and the sufficient condition for their hysteresis loop to be pinched at the origin is derived. It turns out that the analysed behaviour can be observed only for just one concrete initial state of the device. This knowledge is conclusive for understanding why such devices cannot be regarded as memristors.",
  address="Hindawi",
  chapter="150098",
  doi="10.1155/2018/1747865",
  howpublished="online",
  institution="Hindawi",
  number="1",
  volume="2018",
  year="2018",
  month="september",
  pages="1--10",
  publisher="Hindawi",
  type="journal article in Web of Science"
}