Detail publikace

Multi-state memory cell with resonant tunelling diodes: circuit tool for chaos generation

Originální název

Multi-state memory cell with resonant tunelling diodes: circuit tool for chaos generation

Anglický název

Multi-state memory cell with resonant tunelling diodes: circuit tool for chaos generation

Jazyk

en

Originální abstrakt

This paper presents fundamental circuit of a multi-valued static memory cell working as a natural source of chaos. Standard situation is that a pair of the resonant tunneling diodes is connected in series. In our case, three changes have been made to enrich possible dynamical performance of analyzed memory. First change is that one diode is linearized to simplify describing mathematical model and to ease realization of equivalent circuit. Second modification lies in the ampere-voltage curve of nonlinear diode; it will be scalar odd-symmetrical piecewise linear function with positive or negative slope in the inner segment. In addition, negative value of parasitic capacitance of some diode is admitted. Numerical analysis proves that this generalized memory exhibits several strange attractors with the different geometrical shapes. Experimental measurements demonstrate that observed chaotic attractors are neither numerical artifact nor transient behavior. Structural stability of discovered chaotic attractor is documented by gallery of oscilloscope screenshots. Connection between system operation as memory and chaotic oscillator is discussed.

Anglický abstrakt

This paper presents fundamental circuit of a multi-valued static memory cell working as a natural source of chaos. Standard situation is that a pair of the resonant tunneling diodes is connected in series. In our case, three changes have been made to enrich possible dynamical performance of analyzed memory. First change is that one diode is linearized to simplify describing mathematical model and to ease realization of equivalent circuit. Second modification lies in the ampere-voltage curve of nonlinear diode; it will be scalar odd-symmetrical piecewise linear function with positive or negative slope in the inner segment. In addition, negative value of parasitic capacitance of some diode is admitted. Numerical analysis proves that this generalized memory exhibits several strange attractors with the different geometrical shapes. Experimental measurements demonstrate that observed chaotic attractors are neither numerical artifact nor transient behavior. Structural stability of discovered chaotic attractor is documented by gallery of oscilloscope screenshots. Connection between system operation as memory and chaotic oscillator is discussed.

BibTex


@inproceedings{BUT148210,
  author="Jiří {Petržela}",
  title="Multi-state memory cell with resonant tunelling diodes: circuit tool for chaos generation",
  annote="This paper presents fundamental circuit of a multi-valued static memory cell working as a natural source of chaos. Standard situation is that a pair of the resonant tunneling diodes is connected in series. In our case, three changes have been made to enrich possible dynamical performance of analyzed memory. First change is that one diode is linearized to simplify describing mathematical model and to ease realization of equivalent circuit. Second modification lies in the ampere-voltage curve of nonlinear diode; it will be scalar odd-symmetrical piecewise linear function with positive or negative slope in the inner segment. In addition, negative value of parasitic capacitance of some diode is admitted. Numerical analysis proves that this generalized memory exhibits several strange attractors with the different geometrical shapes. Experimental measurements demonstrate that observed chaotic attractors are neither numerical artifact nor transient behavior. Structural stability of discovered chaotic attractor is documented by gallery of oscilloscope screenshots. Connection between system operation as memory and chaotic oscillator is discussed.",
  address="CVUT",
  booktitle="Proceedings of 28th International Conference Radioelektronika 2018",
  chapter="148210",
  doi="10.1109/RADIOELEK.2018.8376360",
  howpublished="electronic, physical medium",
  institution="CVUT",
  year="2018",
  month="april",
  pages="1--5",
  publisher="CVUT",
  type="conference paper"
}