Detail publikace

Voltage Driven-Bulk Op-Amps with Enhanced Common Mode Rejection Ratio.

Originální název

Voltage Driven-Bulk Op-Amps with Enhanced Common Mode Rejection Ratio.

Anglický název

Voltage Driven-Bulk Op-Amps with Enhanced Common Mode Rejection Ratio.

Jazyk

en

Originální abstrakt

The most significant problem to design the low-voltage operational amplifier is the limitation of the threshold voltage of the MOSFETs. In this paper an alternative new technique of Voltage Driven-Bulk CMOS, will be used to remove the threshold voltage requirement of MOSFETs from the signal path, and a device which is similar to the JFET transistor with depletion characteristics is obtained.

Anglický abstrakt

The most significant problem to design the low-voltage operational amplifier is the limitation of the threshold voltage of the MOSFETs. In this paper an alternative new technique of Voltage Driven-Bulk CMOS, will be used to remove the threshold voltage requirement of MOSFETs from the signal path, and a device which is similar to the JFET transistor with depletion characteristics is obtained.

BibTex


@inproceedings{BUT14248,
  author="Fabian {Khateb} and Feras {Moualla} and Vladislav {Musil}",
  title="Voltage Driven-Bulk Op-Amps with Enhanced Common Mode Rejection Ratio.",
  annote="The most significant problem to design the low-voltage operational amplifier is the limitation of the threshold voltage of the MOSFETs. In this paper an alternative new technique of Voltage Driven-Bulk CMOS, will be used to remove the threshold voltage requirement of MOSFETs from the signal path, and a device which is similar to the JFET transistor with depletion characteristics is obtained.",
  address="Nakl. Ing. Zdeněk Novotný CSc., Brno, Ondráčkova 105",
  chapter="14248",
  institution="Nakl. Ing. Zdeněk Novotný CSc., Brno, Ondráčkova 105",
  year="2004",
  month="september",
  pages="185",
  publisher="Nakl. Ing. Zdeněk Novotný CSc., Brno, Ondráčkova 105",
  type="conference paper"
}