Detail publikace

0.5-V Bulk-Driven Quasi-Floating Gate Transconductance Amplifier

KUMNGERN, M. TORTEANCHAI, U. KHATEB, F.

Originální název

0.5-V Bulk-Driven Quasi-Floating Gate Transconductance Amplifier

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

This paper describes a new low-voltage low-power transconductance amplifier for low-voltage low-power signal processing applications. The proposed circuit uses bulk-driven quasi-floating gate technique to offer a 0.5 V operating power supply and high operating frequency. The performances of the proposed circuit can be conformed using PSPICE simulations. The simulation result shows that the proposed circuit provides 16.7 uW power consumption and 10 MHz open loop gain. The proposed circuit has been used to realize Tow-Thomas biquad.

Klíčová slova

Amplifier; bulk-driven MOS; quasi-floating gate; low-voltage low-power circuit

Autoři

KUMNGERN, M.; TORTEANCHAI, U.; KHATEB, F.

Vydáno

6. 1. 2018

Nakladatel

IEEE

Místo

Batumi, Georgia

ISBN

978-9972-1-2874-5

Kniha

Proceedings of the 2017 24th IEEE International Conference on Electronics, Circuits and Systems (ICECS).

Strany od

152

Strany do

155

Strany počet

4

URL

http://ieeexplore.ieee.org/document/8292043/

BibTex

@inproceedings{BUT141736,
  author="Montree {Kumngern} and Usa {Torteanchai} and Fabian {Khateb}",
  title="0.5-V Bulk-Driven Quasi-Floating Gate Transconductance Amplifier",
  booktitle="Proceedings of the 2017 24th IEEE International Conference on Electronics, Circuits and Systems (ICECS).",
  year="2018",
  pages="152--155",
  publisher="IEEE",
  address="Batumi, Georgia",
  doi="10.1109/ICECS.2017.8292043",
  isbn="978-9972-1-2874-5",
  url="http://ieeexplore.ieee.org/document/8292043/"
}