Detail publikace

Memristive Two-Ports

Originální název

Memristive Two-Ports

Anglický název

Memristive Two-Ports

Jazyk

en

Originální abstrakt

In the paper, the memristive two-port is defined via its constitutive relation as a two-dimensional surface in a fourdimensional space of the port charges and fluxes. It follows from six possible representations of this two-port that it can be modeled via classical two-terminal memristors /memductors, complemented by four types of memristive controlled sources, each of them being controlled by two state variables. Two examples of the memristive two-port are analyzed, viz. the circuit with mutual memristors and the memristive transformer.

Anglický abstrakt

In the paper, the memristive two-port is defined via its constitutive relation as a two-dimensional surface in a fourdimensional space of the port charges and fluxes. It follows from six possible representations of this two-port that it can be modeled via classical two-terminal memristors /memductors, complemented by four types of memristive controlled sources, each of them being controlled by two state variables. Two examples of the memristive two-port are analyzed, viz. the circuit with mutual memristors and the memristive transformer.

BibTex


@inproceedings{BUT141011,
  author="Dalibor {Biolek} and Zdeněk {Biolek} and Viera {Biolková}",
  title="Memristive Two-Ports",
  annote="In the paper, the memristive two-port is defined via its constitutive relation as a two-dimensional surface in a fourdimensional space of the port charges and fluxes. It follows from six possible representations of this two-port that it can be modeled via classical two-terminal memristors /memductors, complemented by four types of memristive controlled sources, each of them being controlled by two state variables. Two examples of the memristive two-port are analyzed, viz. the circuit with mutual memristors and the memristive transformer.",
  address="IEEE",
  booktitle="2017 27th International Symposium on Power and Timing Modeling, Optimization and Simulation (PATMOS)",
  chapter="141011",
  doi="10.1109/PATMOS.2017.8106954",
  howpublished="electronic, physical medium",
  institution="IEEE",
  year="2017",
  month="september",
  pages="1--4",
  publisher="IEEE",
  type="conference paper"
}