Detail publikace

Modified MIM Model of Titanium Dioxide Memristor for Reliable Simulations in SPICE

Originální název

Modified MIM Model of Titanium Dioxide Memristor for Reliable Simulations in SPICE

Anglický název

Modified MIM Model of Titanium Dioxide Memristor for Reliable Simulations in SPICE

Jazyk

en

Originální abstrakt

Modifications of the mathematical model of the TiO2 memristor, based on the approximations of Simmons' equations of tunnel effects in Metal-Insulator-Metal structures, are proposed. These modifications improve the performance of the model in the SPICE environment, taking into account the numerical limits of SPICE-family programs.

Anglický abstrakt

Modifications of the mathematical model of the TiO2 memristor, based on the approximations of Simmons' equations of tunnel effects in Metal-Insulator-Metal structures, are proposed. These modifications improve the performance of the model in the SPICE environment, taking into account the numerical limits of SPICE-family programs.

Dokumenty

BibTex


@inproceedings{BUT140991,
  author="Dalibor {Biolek} and Viera {Biolková} and Zdeněk {Kolka}",
  title="Modified MIM Model of Titanium Dioxide Memristor for Reliable Simulations in SPICE",
  annote="Modifications of the mathematical model of the TiO2 memristor, based on the approximations of Simmons' equations of tunnel effects in Metal-Insulator-Metal structures, are proposed. These modifications improve the performance of the model in the SPICE environment, taking into account the numerical limits of SPICE-family programs.",
  address="IEEE",
  booktitle="Proc. of 14th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), 2017",
  chapter="140991",
  doi="10.1109/SMACD.2017.7981564",
  edition="1",
  howpublished="electronic, physical medium",
  institution="IEEE",
  year="2017",
  month="june",
  pages="1--4",
  publisher="IEEE",
  type="conference paper"
}