Detail publikace

Measurement of Power Transistors Dynamic Parameters

Originální název

Measurement of Power Transistors Dynamic Parameters

Anglický název

Measurement of Power Transistors Dynamic Parameters

Jazyk

en

Originální abstrakt

This article deals with analysis of switching processes of power transistor as well as with description of performed measurement methods of these dynamic processes. The results are demonstrated on power IGBT transistor, nevertheless the measurement methods are valid for all power devices in general. Due to the fact, that the extremely dynamic and power processes have to be analyzed, then the special measuring laboratory workplace (MLW) was developed for proper oscillographic measurement of these processes. Further, the current sensor with ultra-wide bandwidth has to be developed. Description of the MLW is presented in this paper together with its development process. This paper gives the complex methodology for analysis of power devices switching processes.

Anglický abstrakt

This article deals with analysis of switching processes of power transistor as well as with description of performed measurement methods of these dynamic processes. The results are demonstrated on power IGBT transistor, nevertheless the measurement methods are valid for all power devices in general. Due to the fact, that the extremely dynamic and power processes have to be analyzed, then the special measuring laboratory workplace (MLW) was developed for proper oscillographic measurement of these processes. Further, the current sensor with ultra-wide bandwidth has to be developed. Description of the MLW is presented in this paper together with its development process. This paper gives the complex methodology for analysis of power devices switching processes.

BibTex


@inproceedings{BUT139870,
  author="Petr {Procházka} and Ján {Mikláš} and Ivo {Pazdera} and Miroslav {Patočka} and Jan {Knobloch} and Radoslav {Cipín}",
  title="Measurement of Power Transistors Dynamic Parameters",
  annote="This article deals with analysis of switching processes of power transistor as well as with description of performed measurement methods of these dynamic processes. The results are demonstrated on power IGBT transistor, nevertheless the measurement methods are valid for all power devices in general. Due to the fact, that the extremely dynamic and power processes have to be analyzed, then the special measuring laboratory workplace (MLW) was developed for proper oscillographic measurement of these processes. Further, the current sensor with ultra-wide bandwidth has to be developed. Description of the MLW is presented in this paper together with its development process. This paper gives the complex methodology for analysis of power devices switching processes.",
  address="Springer",
  booktitle="MECHATRONICS 2017",
  chapter="139870",
  doi="10.1007/978-3-319-65960-2_70",
  howpublished="online",
  institution="Springer",
  year="2017",
  month="august",
  pages="571--577",
  publisher="Springer",
  type="conference paper"
}