Detail publikace

Measurement of Power Transistors Dynamic Parameters

PROCHÁZKA, P. MIKLÁŠ, J. PAZDERA, I. PATOČKA, M. KNOBLOCH, J. CIPÍN, R.

Originální název

Measurement of Power Transistors Dynamic Parameters

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

This article deals with analysis of switching processes of power transistor as well as with description of performed measurement methods of these dynamic processes. The results are demonstrated on power IGBT transistor, nevertheless the measurement methods are valid for all power devices in general. Due to the fact, that the extremely dynamic and power processes have to be analyzed, then the special measuring laboratory workplace (MLW) was developed for proper oscillographic measurement of these processes. Further, the current sensor with ultra-wide bandwidth has to be developed. Description of the MLW is presented in this paper together with its development process. This paper gives the complex methodology for analysis of power devices switching processes.

Klíčová slova

Power transistor; IGBT transistor; Measurement circuit; Switching process

Autoři

PROCHÁZKA, P.; MIKLÁŠ, J.; PAZDERA, I.; PATOČKA, M.; KNOBLOCH, J.; CIPÍN, R.

Vydáno

1. 1. 2018

Nakladatel

Springer

ISBN

978-3-319-65959-6

Kniha

MECHATRONICS 2017

Strany od

571

Strany do

577

Strany počet

7

URL

https://link.springer.com/chapter/10.1007/978-3-319-65960-2_70

BibTex

@inproceedings{BUT139870,
  author="Petr {Procházka} and Ján {Mikláš} and Ivo {Pazdera} and Miroslav {Patočka} and Jan {Knobloch} and Radoslav {Cipín}",
  title="Measurement of Power Transistors Dynamic Parameters",
  booktitle="MECHATRONICS 2017",
  year="2018",
  pages="571--577",
  publisher="Springer",
  doi="10.1007/978-3-319-65960-2\{_}70",
  isbn="978-3-319-65959-6",
  url="https://link.springer.com/chapter/10.1007/978-3-319-65960-2_70"
}