Detail publikace

Low-voltage Fully Differential Difference Transconductance Amplifier

KHATEB, F. KUMNGERN, M. KULEJ, T. KLEDROWETZ, V.

Originální název

Low-voltage Fully Differential Difference Transconductance Amplifier

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

A new complementary metal–oxide–semiconductor (CMOS) structure for fully differential difference transconductance amplifier (FDDTA) is presented in this study. Thanks to using the non-conventional quasi-floating-gate (QFG) technique the circuit is capable to work under low-voltage supply of 0.6 V with extended input voltage range and with class AB output stages. The QFG multiple-input metal–oxide–semiconductor transistor is used to reduce the count of the differential pairs that needed to realise the FDDTA with simple CMOS structure. The static power consumption of the proposed FDDTA is 40 uW. The FDDTA was designed in Cadence platform using 0.18 um CMOS technology from Taiwan Semiconductor Manufacturing Company (TSMC). As an example of applications a three-stage quadrature oscillator and fifth-order elliptic low-pass filter are presented to confirm the attractive features of the proposed CMOS structure of the FDDTA.

Klíčová slova

Fully differential difference transconductance amplifier; Low-voltage low-power CMOS; Quasi-floating-gate technique.

Autoři

KHATEB, F.; KUMNGERN, M.; KULEJ, T.; KLEDROWETZ, V.

Vydáno

26. 1. 2018

Nakladatel

INST ENGINEERING TECHNOLOGY-IET

Místo

ENGLAND

ISSN

1751-858X

Periodikum

IET Circuits, Devices and Systems

Ročník

12

Číslo

1, IF: 1.395

Stát

Spojené království Velké Británie a Severního Irska

Strany od

73

Strany do

81

Strany počet

9

URL

http://dx.doi.org/10.1049/iet-cds.2017.0057

BibTex

@article{BUT136110,
  author="Fabian {Khateb} and Montree {Kumngern} and Tomasz {Kulej} and Vilém {Kledrowetz}",
  title="Low-voltage Fully Differential Difference Transconductance Amplifier",
  journal="IET Circuits, Devices and Systems",
  year="2018",
  volume="12",
  number="1, IF: 1.395",
  pages="73--81",
  doi="10.1049/iet-cds.2017.0057",
  issn="1751-858X",
  url="http://dx.doi.org/10.1049/iet-cds.2017.0057"
}