Detail publikace

Bulk-driven class AB fully-balanced differential difference amplifier

Originální název

Bulk-driven class AB fully-balanced differential difference amplifier

Anglický název

Bulk-driven class AB fully-balanced differential difference amplifier

Jazyk

en

Originální abstrakt

This paper presents a new low-voltage class AB fully-balanced differential difference amplifier (FB-DDA) employing the bulk-driven technique. At the FB-DDA differential pairs the bulk terminal of the MOS transistors are used as signal inputs in order to increase the common-mode input range (ICM) under low supply voltage. At the class AB output stages the bulk terminal of the MOS transistors are used as control inputs in order to adjust the quiescent currents and compensate them against the process and temperatures (P/T) variation. The voltage supply of the FB-DDA is 0.7 V and the quiescent power consumption is 8.3 uW. The open loop voltage gain is 68 dB and the gain-bandwidth product (GBW) is 168 kHz for 10 pF capacitive load. The circuit performance was simulated in Cadence/Spectre environment using the TSMC 0.18 um CMOS process.

Anglický abstrakt

This paper presents a new low-voltage class AB fully-balanced differential difference amplifier (FB-DDA) employing the bulk-driven technique. At the FB-DDA differential pairs the bulk terminal of the MOS transistors are used as signal inputs in order to increase the common-mode input range (ICM) under low supply voltage. At the class AB output stages the bulk terminal of the MOS transistors are used as control inputs in order to adjust the quiescent currents and compensate them against the process and temperatures (P/T) variation. The voltage supply of the FB-DDA is 0.7 V and the quiescent power consumption is 8.3 uW. The open loop voltage gain is 68 dB and the gain-bandwidth product (GBW) is 168 kHz for 10 pF capacitive load. The circuit performance was simulated in Cadence/Spectre environment using the TSMC 0.18 um CMOS process.

BibTex


@article{BUT134892,
  author="Fabian {Khateb} and Spyridon {Vlassis} and Tomasz {Kulej} and George {Souliotis}",
  title="Bulk-driven class AB fully-balanced differential difference amplifier",
  annote="This paper presents a new low-voltage class AB fully-balanced differential difference amplifier (FB-DDA) employing the bulk-driven technique. At the FB-DDA differential pairs the bulk terminal of the MOS transistors are used as signal inputs in order to increase the common-mode input range (ICM) under low supply voltage. At the class AB output stages the bulk terminal of the MOS transistors are used as control inputs in order to adjust the quiescent currents and compensate them against the process and temperatures (P/T) variation. The voltage supply of the FB-DDA is 0.7 V and the quiescent power consumption is 8.3 uW. The open loop voltage gain is 68 dB and the gain-bandwidth product (GBW) is 168 kHz for 10 pF capacitive load. The circuit performance was simulated in Cadence/Spectre environment using the TSMC 0.18 um CMOS process.",
  address="Springer",
  chapter="134892",
  doi="10.1007/s10470-017-1024-1",
  howpublished="print",
  institution="Springer",
  number="1, IF: 0.623",
  volume="2017 (93)",
  year="2017",
  month="july",
  pages="179--187",
  publisher="Springer",
  type="journal article in Web of Science"
}