Detail publikace

RTS in submicron MOSFETs and quantum dots

Originální název

RTS in submicron MOSFETs and quantum dots

Anglický název

RTS in submicron MOSFETs and quantum dots

Jazyk

en

Originální abstrakt

In the present paper, emphasis is laid on those RTS showing a capture process, which deviates from the standard Schockley-Read-Hall kinetics. A modified two-step approach is proposed. In this case the charge carrier quantum transitions represent a primary process X(t), which involves two or three quantum states.

Anglický abstrakt

In the present paper, emphasis is laid on those RTS showing a capture process, which deviates from the standard Schockley-Read-Hall kinetics. A modified two-step approach is proposed. In this case the charge carrier quantum transitions represent a primary process X(t), which involves two or three quantum states.

BibTex


@inproceedings{BUT12660,
  author="Josef {Šikula} and Jan {Pavelka} and Vlasta {Sedláková} and Munecazu {Tacano} and Sumihisa {Hashiguchi} and Masato {Toita}",
  title="RTS in submicron MOSFETs and quantum dots",
  annote="In the present paper, emphasis is laid on those RTS showing a capture process, which deviates from the standard Schockley-Read-Hall kinetics. A modified two-step approach is proposed. In this case the charge carrier quantum transitions represent a primary process X(t), which involves two or three quantum states.",
  address="The Society of Photo-Optical Instrumentation Engineers",
  booktitle="Proceedings of SPIE - Noise and Information in Nanoelectronics, Sensors, and Standards II",
  chapter="12660",
  institution="The Society of Photo-Optical Instrumentation Engineers",
  year="2004",
  month="january",
  pages="64",
  publisher="The Society of Photo-Optical Instrumentation Engineers",
  type="conference paper"
}