Detail publikace

Fully Differential Difference Transconductance Amplifier Using FG-MOS Transistors

Originální název

Fully Differential Difference Transconductance Amplifier Using FG-MOS Transistors

Anglický název

Fully Differential Difference Transconductance Amplifier Using FG-MOS Transistors

Jazyk

en

Originální abstrakt

This paper presents a fully differential difference transconductance amplifier for applications to low-voltage and low-power analogue circuits. Differential difference input voltage can be obtained using floating-gate MOS transistor technique and it can be taken also the possibility of low supply voltage of the circuit. The proposed active building block has been simulated using TSMC 0.18 μm n-well CMOS technology. The circuit uses 0.4 V supply voltage and consumes a 27 μW of static power. A fully differential universal filter using proposed circuit as active device was presented as an example application.

Anglický abstrakt

This paper presents a fully differential difference transconductance amplifier for applications to low-voltage and low-power analogue circuits. Differential difference input voltage can be obtained using floating-gate MOS transistor technique and it can be taken also the possibility of low supply voltage of the circuit. The proposed active building block has been simulated using TSMC 0.18 μm n-well CMOS technology. The circuit uses 0.4 V supply voltage and consumes a 27 μW of static power. A fully differential universal filter using proposed circuit as active device was presented as an example application.

BibTex


@inproceedings{BUT125090,
  author="Montree {Kumngern} and Fabian {Khateb}",
  title="Fully Differential Difference Transconductance Amplifier Using FG-MOS Transistors",
  annote="This paper presents a fully differential difference transconductance amplifier for applications to low-voltage and
low-power analogue circuits. Differential difference input voltage can be obtained using floating-gate MOS transistor technique and it can be taken also the possibility of low supply voltage of the circuit. The proposed active building block has been simulated using TSMC 0.18 μm n-well CMOS technology. The circuit uses 0.4 V supply voltage and consumes a 27 μW of static power. A fully differential universal filter using proposed circuit
as active device was presented as an example application.",
  address="Institute of Electrical and Electronics Engineers Inc.",
  booktitle="2015 International Symposium on Intelligent Signal Processing and Communication Systems, ISPACS 2015",
  chapter="125090",
  doi="10.1109/ISPACS.2015.7432792",
  howpublished="print",
  institution="Institute of Electrical and Electronics Engineers Inc.",
  year="2015",
  month="november",
  pages="337--341",
  publisher="Institute of Electrical and Electronics Engineers Inc.",
  type="conference paper"
}