Detail publikace

Influence of Underlayer on Crystallography and Roughness of Aluminum Nitride Thin Film Reactively Sputtered by Ion-Beam Kaufman Source

GABLECH, I. SVATOŠ, V. PRÁŠEK, J. HUBÁLEK, J.

Originální název

Influence of Underlayer on Crystallography and Roughness of Aluminum Nitride Thin Film Reactively Sputtered by Ion-Beam Kaufman Source

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

This paper deals with deposition of aluminum nitride layer on different underlayers namely silicon (100), amorphous thermal silicon dioxide, and titanium (001). The aluminum nitride layer was deposited using 3-grid radio frequency inductive coupled plasma (RFICP) Kaufman ion-beam source which provides slow deposition rate with low energy of plasma ions. This possibility leads to high homogeneity and very smooth surface. Titanium layer was deposited by argon plasma at low energy of 200 eV to attain the highly oriented c-axis layer. The aluminum nitride was sputtered on substrate which was heated to 350 °C. The nitrogen plasma only at energy of 500 eV was used. It was observed the aluminum nitride deposited on thermal silicon dioxide has the highest root mean square of roughness (RRMS) = 1.49 nm and the lowest intensity of X-ray diffraction in Bragg-Brentano focusing geometry (XRD–BB). The aluminum nitride deposited on silicon (100) shows higher intensity of XRD–BB and the lowest RRMS = 0.48 nm. Although the RRMS = 0.66 nm of aluminum nitride thin film deposited on titanium (001) underlayer was obtained, the highest intensity of XRD– BB was observed. Azimuthally averaged intensity of pole figures obtained using parallel beam setup represents the information about misorientation of individual crystallites. These analyses were performed for aluminum nitride layers deposited on titanium (001) film and silicon (100) wafer. Misorientation determined from full width at half maximum (FWHM) of the pole figures was of about 0.5° lower for aluminum nitride thin film deposited on titanium underlayer than one deposited directly on silicon substrate without silicon dioxide.

Klíčová slova

Aluminum Nitride, Titanium, c-axis orientation, Kaufman ion-beam source, reactive sputtering, AFM, XRD

Autoři

GABLECH, I.; SVATOŠ, V.; PRÁŠEK, J.; HUBÁLEK, J.

Rok RIV

2015

Vydáno

14. 10. 2015

Nakladatel

Tanger

Místo

Ostrava

ISBN

978-80-87294-59-8

Kniha

Proceedings of 7 th International conference Nanocon 2015

Edice

1

Číslo edice

1

Strany od

89

Strany do

93

Strany počet

5

URL

http://www.nanocon.eu/files/proceedings/23/papers/4535.pdf

BibTex

@inproceedings{BUT118321,
  author="Imrich {Gablech} and Vojtěch {Svatoš} and Jan {Prášek} and Jaromír {Hubálek}",
  title="Influence of Underlayer on Crystallography and Roughness of Aluminum Nitride Thin Film Reactively Sputtered by Ion-Beam Kaufman Source",
  booktitle="Proceedings of 7 th International conference Nanocon 2015",
  year="2015",
  series="1",
  number="1",
  pages="89--93",
  publisher="Tanger",
  address="Ostrava",
  isbn="978-80-87294-59-8",
  url="http://www.nanocon.eu/files/proceedings/23/papers/4535.pdf"
}