Detail publikace

Enhanced PSpice Model of TiO2 Memristor

Originální název

Enhanced PSpice Model of TiO2 Memristor

Anglický název

Enhanced PSpice Model of TiO2 Memristor

Jazyk

en

Originální abstrakt

The present paper enhances Pickett's model of the TiO2 memristor by modifying its Port Equation in order to eliminate a non-physical negative resistance region that occurs at higher currents. This region causes an ambiguity of the static I-V characteristic, which may bring non-convergence, numerical errors, and non-physical solutions during time-domain simulation. The modification is based on the tangential extrapolation. Full listing of the (P)Spice macromodel is provided.

Anglický abstrakt

The present paper enhances Pickett's model of the TiO2 memristor by modifying its Port Equation in order to eliminate a non-physical negative resistance region that occurs at higher currents. This region causes an ambiguity of the static I-V characteristic, which may bring non-convergence, numerical errors, and non-physical solutions during time-domain simulation. The modification is based on the tangential extrapolation. Full listing of the (P)Spice macromodel is provided.

BibTex


@article{BUT115395,
  author="Zdeněk {Kolka} and Dalibor {Biolek} and Viera {Biolková}",
  title="Enhanced PSpice Model of TiO2 Memristor",
  annote="The present paper enhances Pickett's model of the TiO2 memristor by modifying its Port Equation in order to eliminate a non-physical negative resistance region that occurs at higher currents. This region causes an ambiguity of the static I-V characteristic, which may bring non-convergence, numerical errors,
and non-physical solutions during time-domain simulation. The modification is based on the tangential extrapolation. Full listing of the (P)Spice macromodel is provided.",
  address="NAUN",
  chapter="115395",
  howpublished="online",
  institution="NAUN",
  number="1",
  volume="2",
  year="2015",
  month="july",
  pages="25--28",
  publisher="NAUN",
  type="journal article - other"
}