Detail publikace

Improved Model of TiO2 Memristor

Originální název

Improved Model of TiO2 Memristor

Anglický název

Improved Model of TiO2 Memristor

Jazyk

en

Originální abstrakt

Analysis of Pickett model of the HP TiO2 memristor presented in this paper reveals an ambiguity of its Port Equation, which may cause non-convergence, numerical errors, and non-physical solutions during time-domain simulation. As there is no easy fix of the original model a new behavioral approximation of static I-V characteristics has been proposed. The approximation matches well the original model and is unambiguous.

Anglický abstrakt

Analysis of Pickett model of the HP TiO2 memristor presented in this paper reveals an ambiguity of its Port Equation, which may cause non-convergence, numerical errors, and non-physical solutions during time-domain simulation. As there is no easy fix of the original model a new behavioral approximation of static I-V characteristics has been proposed. The approximation matches well the original model and is unambiguous.

BibTex


@article{BUT115011,
  author="Zdeněk {Kolka} and Dalibor {Biolek} and Viera {Biolková}",
  title="Improved Model of TiO2 Memristor",
  annote="Analysis of Pickett model of the HP TiO2 memristor presented in this paper reveals an ambiguity of its Port Equation, which may cause non-convergence, numerical errors, and non-physical solutions during time-domain simulation. As there is no easy fix of the original model a new behavioral approximation of static I-V characteristics has been proposed. The approximation matches well the original model and is unambiguous.",
  address="Společnost pro radiotechnické inženýrství",
  chapter="115011",
  doi="10.13164/re.2015.0378",
  institution="Společnost pro radiotechnické inženýrství",
  number="2",
  volume="24",
  year="2015",
  month="june",
  pages="378--383",
  publisher="Společnost pro radiotechnické inženýrství",
  type="journal article in Web of Science"
}