Detail publikace

Using RADFETs for alpha radiation dosimetry

SHARP, R. HOFMAN, J. HOLMES-SIEDLE, A.

Originální název

Using RADFETs for alpha radiation dosimetry

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

The effects of alpha irradiation on the change in threshold voltage have been measured for standard RADFET die housed in a custom package. The intended application is for monitoring process stability in an ion implantation process. The results show that these devices exhibit good promise for use as a routine dosimeter for periodic comparison of the stability of the process.

Klíčová slova

alpha radiation, RADFET, threshold voltage, ion implantation, power semiconductors

Autoři

SHARP, R.; HOFMAN, J.; HOLMES-SIEDLE, A.

Rok RIV

2011

Vydáno

16. 9. 2011

Nakladatel

IEEE

Místo

Sevilla, Spain

ISBN

9781457705854

Kniha

Proceedings, 12th European Conference on Radiation and its Effects on Components and Systems (RADECS 2011) : Sevilla, Spain, September 19-23, 2011

Strany od

1

Strany do

4

Strany počet

4

BibTex

@inproceedings{BUT114091,
  author="Richard {Sharp} and Jiří {Hofman} and Andrew {Holmes-Siedle}",
  title="Using RADFETs for alpha radiation dosimetry",
  booktitle="Proceedings, 12th European Conference on Radiation and its Effects on Components and Systems (RADECS 2011) : Sevilla, Spain, September 19-23, 2011",
  year="2011",
  pages="1--4",
  publisher="IEEE",
  address="Sevilla, Spain",
  isbn="9781457705854"
}