Detail publikace

A Statistical Physics Model Of Voltage-Dependent Ion Channels

Originální název

A Statistical Physics Model Of Voltage-Dependent Ion Channels

Anglický název

A Statistical Physics Model Of Voltage-Dependent Ion Channels

Jazyk

en

Originální abstrakt

In this study, we formulate dynamics of the ion channel gates based on the path probability method by using the second option called recipe II, and obtain expressions of the rate constants explicitly.

Anglický abstrakt

In this study, we formulate dynamics of the ion channel gates based on the path probability method by using the second option called recipe II, and obtain expressions of the rate constants explicitly.

BibTex


@inproceedings{BUT11212,
  author="Mahmut {Ozer} and Ivo {Provazník} and Kol {Zengin}",
  title="A Statistical Physics Model Of Voltage-Dependent Ion Channels",
  annote="In this study, we formulate dynamics of the ion channel gates based on the path probability method by using the second option called recipe II, and obtain expressions of the rate constants explicitly.",
  address="Vutium Press",
  booktitle="Analysis of Biomedical Signals and Images",
  chapter="11212",
  institution="Vutium Press",
  journal="Analysis of Biomedical Signals and Images",
  year="2004",
  month="june",
  pages="387",
  publisher="Vutium Press",
  type="conference paper"
}