Detail publikace

The experimental results of the bulk-driven quasi-floating-gate MOS transistor

Originální název

The experimental results of the bulk-driven quasi-floating-gate MOS transistor

Anglický název

The experimental results of the bulk-driven quasi-floating-gate MOS transistor

Jazyk

en

Originální abstrakt

This brief presents the experimental results of the new principle technique named bulk-driven quasi-floating-gate (BD-QFG) MOS transistor (MOST) that was presented in AEU - International Journal of Electronics and Communications in year 2014. The BD-QFG MOST offers high transconductance value and extended common mode voltage range (CMVR) all under low-voltage supply (LV) low-power consumption (LP) conditions. Based on this technique a differential difference current conveyor (DDCC) was designed and fabricated in Cadence platform using 0.35um CMOS AMIS process with total chip area 213um x 266um. The voltage supply and the power consumption are +-500mV and 37uW, respectively. The experimental result shows near rail-to-rail common mode voltage range.

Anglický abstrakt

This brief presents the experimental results of the new principle technique named bulk-driven quasi-floating-gate (BD-QFG) MOS transistor (MOST) that was presented in AEU - International Journal of Electronics and Communications in year 2014. The BD-QFG MOST offers high transconductance value and extended common mode voltage range (CMVR) all under low-voltage supply (LV) low-power consumption (LP) conditions. Based on this technique a differential difference current conveyor (DDCC) was designed and fabricated in Cadence platform using 0.35um CMOS AMIS process with total chip area 213um x 266um. The voltage supply and the power consumption are +-500mV and 37uW, respectively. The experimental result shows near rail-to-rail common mode voltage range.

BibTex


@article{BUT109872,
  author="Fabian {Khateb}",
  title="The experimental results of the bulk-driven quasi-floating-gate MOS transistor",
  annote="This brief presents the experimental results of the new principle technique named bulk-driven quasi-floating-gate (BD-QFG) MOS transistor (MOST) that was presented in AEU - International Journal of Electronics and Communications in year 2014. The BD-QFG MOST offers high transconductance value and extended common mode voltage range (CMVR) all under low-voltage supply (LV) low-power consumption (LP) conditions. Based on this technique a differential difference current conveyor (DDCC) was designed and fabricated in Cadence platform using 0.35um CMOS AMIS process with total chip area 213um x 266um. The voltage supply and the power consumption are +-500mV and 37uW, respectively. The experimental result shows near rail-to-rail common mode voltage range.",
  address="ELSEVIER GMBH, URBAN & FISCHER VERLAG",
  chapter="109872",
  doi="10.1016/j.aeue.2014.10.016",
  institution="ELSEVIER GMBH, URBAN & FISCHER VERLAG",
  number="1, IF: 0. 601",
  volume="2015 (69)",
  year="2015",
  month="january",
  pages="462--466",
  publisher="ELSEVIER GMBH, URBAN & FISCHER VERLAG",
  type="journal article in Web of Science"
}