Detail publikace

Optimization of ion-atomic beam source for deposition of GaN ultrathin films

MACH, J. ŠAMOŘIL, T. KOLÍBAL, M. ZLÁMAL, J. VOBORNÝ, S. BARTOŠÍK, M. ŠIKOLA, T.

Originální název

Optimization of ion-atomic beam source for deposition of GaN ultrathin films

Anglický název

Optimization of ion-atomic beam source for deposition of GaN ultrathin films

Jazyk

en

Originální abstrakt

We describe the optimization and application of an ion-atomic beam source for ion-beam-assisted deposition of ultrathin films in ultrahigh vacuum. The device combines an effusion cell and electronimpact ion beam source to produce ultra-low energy (20–200 eV) ion beams and thermal atomic beams simultaneously. The source was equipped with a focusing system of electrostatic electrodes increasing the maximum nitrogen ion current density in the beam of a diameter of 15 mm by one order of magnitude (j 1000 nA/cm2). Hence, a successful growth of GaN ultrathin films on Si(111) 7 x 7 substrate surfaces at reasonable times and temperatures significantly lower (RT, 300 C) than in conventional metalorganic chemical vapor deposition technologies (1000 C) was achieved. The chemical composition of these films was characterized in situ by X-ray Photoelectron Spectroscopy and morphology ex situ using Scanning Electron Microscopy. It has been shown that the morphology of GaN layers strongly depends on the relative Ga-N bond concentration in the layers.

Anglický abstrakt

We describe the optimization and application of an ion-atomic beam source for ion-beam-assisted deposition of ultrathin films in ultrahigh vacuum. The device combines an effusion cell and electronimpact ion beam source to produce ultra-low energy (20–200 eV) ion beams and thermal atomic beams simultaneously. The source was equipped with a focusing system of electrostatic electrodes increasing the maximum nitrogen ion current density in the beam of a diameter of 15 mm by one order of magnitude (j 1000 nA/cm2). Hence, a successful growth of GaN ultrathin films on Si(111) 7 x 7 substrate surfaces at reasonable times and temperatures significantly lower (RT, 300 C) than in conventional metalorganic chemical vapor deposition technologies (1000 C) was achieved. The chemical composition of these films was characterized in situ by X-ray Photoelectron Spectroscopy and morphology ex situ using Scanning Electron Microscopy. It has been shown that the morphology of GaN layers strongly depends on the relative Ga-N bond concentration in the layers.

Dokumenty

BibTex


@article{BUT108818,
  author="Jindřich {Mach} and Tomáš {Šamořil} and Miroslav {Kolíbal} and Jakub {Zlámal} and Stanislav {Voborný} and Miroslav {Bartošík} and Tomáš {Šikola}",
  title="Optimization of ion-atomic beam source for deposition of GaN ultrathin films",
  annote="We describe the optimization and application of an ion-atomic beam source for ion-beam-assisted deposition of ultrathin films in ultrahigh vacuum. The device combines an effusion cell and electronimpact ion beam source to produce ultra-low energy (20–200 eV) ion beams and thermal atomic beams simultaneously. The source was equipped with a focusing system of electrostatic electrodes increasing the maximum nitrogen ion current density in the beam of a diameter of 15 mm by one order of magnitude (j  1000 nA/cm2). Hence, a successful growth of GaN ultrathin films on Si(111) 7 x 7 substrate surfaces at reasonable times and temperatures significantly lower (RT, 300 C) than in conventional metalorganic chemical vapor deposition technologies (1000 C) was achieved. The chemical composition of these films was characterized in situ by X-ray Photoelectron Spectroscopy and morphology ex situ using Scanning Electron Microscopy. It has been shown that the morphology of GaN layers strongly depends on the relative Ga-N bond concentration in the layers.",
  chapter="108818",
  doi="10.1063/1.4892800",
  number="8",
  volume="85",
  year="2014",
  month="august",
  pages="083302-1--083302-5",
  type="journal article in Web of Science"
}