Detail publikace

AFM imaging and fractal analysis of surface roughness of AlN epilayers on sapphire substrates

DALLAEVA, D. TALU, S. STACH, S. ŠKARVADA, P. TOMÁNEK, P. GRMELA, L.

Originální název

AFM imaging and fractal analysis of surface roughness of AlN epilayers on sapphire substrates

Typ

článek v časopise ve Web of Science, Jimp

Jazyk

angličtina

Originální abstrakt

The paper deals with AFM imaging and characterization of 3D surface morphology of aluminum nitride (AlN) epilayers on sapphire substrates prepared by magnetron sputtering. Due to the effect of temperature changes on epilayer's surface during the fabrication, a surface morphology is studied by combination of atomic force microscopy (AFM) and fractal analysis methods. Both methods are useful tools that may assist manufacturers in developing and fabricating AlN thin films with optimal surface characteristics. Furthermore, they provide different yet complementary information to that offered by traditional surface statistical parameters. This combination is used for the first time for measurement on AlN epilayers on sapphire substrates, and provides the overall 3D morphology of the sample surfaces (by AFM imaging), and reveals fractal characteristics in the surface morphology (fractal analysis).

Klíčová slova

Aluminum nitride; Epitaxy; Substrate; Surface roughness; Atomic force microscopy; Fractal analysis

Autoři

DALLAEVA, D.; TALU, S.; STACH, S.; ŠKARVADA, P.; TOMÁNEK, P.; GRMELA, L.

Rok RIV

2014

Vydáno

1. 9. 2014

Nakladatel

Elsevier

ISSN

0169-4332

Periodikum

Applied Surface Science

Ročník

312

Číslo

312

Stát

Nizozemsko

Strany od

81

Strany do

86

Strany počet

6

BibTex

@article{BUT108712,
  author="Dinara {Sobola} and Stefan {Talu} and Sebastian {Stach} and Pavel {Škarvada} and Pavel {Tománek} and Lubomír {Grmela}",
  title="AFM imaging and fractal analysis of surface roughness of AlN epilayers on sapphire substrates",
  journal="Applied Surface Science",
  year="2014",
  volume="312",
  number="312",
  pages="81--86",
  doi="10.1016/j.apsusc.2014.05.086",
  issn="0169-4332"
}