Detail publikace

Quality Assessment of GaAs Laser Diodes with InAs quantum dots layer by Low-Frequency Noise Measurements

CHOBOLA, Z. LUŇÁK, M. VANĚK, J. HULICIUS, E.

Originální název

Quality Assessment of GaAs Laser Diodes with InAs quantum dots layer by Low-Frequency Noise Measurements

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

This paper deals with comparisons of noise spectroscopy and I-V characteristic of semiconductor lasers diodes GaAs with InAs quantum dots layer. We studied two groups with different technologies (A and B). Each group had 4 samples. The samples were quality screened using noise analysis. From the measurement results it follows that the noise spectral density related to defects is of 1/f or and can by use as a quality indicator.

Klíčová slova

noise, spectroscopy, Laser

Autoři

CHOBOLA, Z.; LUŇÁK, M.; VANĚK, J.; HULICIUS, E.

Rok RIV

2014

Vydáno

12. 5. 2014

Nakladatel

IEEE Serbie

Místo

Belgrade, Serbie

ISBN

978-1-4799-5297-7

Kniha

Proceedings of the International Conference on Microelectronics, ICM

ISSN

2159-1660

Periodikum

International Conference on Microelectronics-MIEL

Ročník

2014

Číslo

1

Stát

Spojené státy americké

Strany od

349

Strany do

352

Strany počet

4

BibTex

@inproceedings{BUT107614,
  author="Zdeněk {Chobola} and Miroslav {Luňák} and Jiří {Vaněk} and Eduard {Hulicius}",
  title="Quality Assessment of GaAs Laser Diodes with InAs quantum dots layer by Low-Frequency Noise Measurements",
  booktitle="Proceedings of the International Conference on Microelectronics, ICM",
  year="2014",
  journal="International Conference on Microelectronics-MIEL",
  volume="2014",
  number="1",
  pages="349--352",
  publisher="IEEE Serbie",
  address="Belgrade, Serbie",
  doi="10.1109/MIEL.2014.6842161",
  isbn="978-1-4799-5297-7",
  issn="2159-1660"
}