Detail publikace

Bulk-driven floating-gate and bulk-driven quasi-floating-gate techniques for low-voltage low-power analog circuits design

Originální název

Bulk-driven floating-gate and bulk-driven quasi-floating-gate techniques for low-voltage low-power analog circuits design

Anglický název

Bulk-driven floating-gate and bulk-driven quasi-floating-gate techniques for low-voltage low-power analog circuits design

Jazyk

en

Originální abstrakt

In this paper, novel non-conventional techniques, named by the author of this paper "bulk-driven floating-gate (BD-FG)" MOS transistor (MOST) and "bulk-driven quasi-floating-gate (BD-QFG) MOST" for low-voltage (LV) low-power (LP) analog circuit design are presented. These novel techniques appear as a good solution to merge the advantages of floating-gate (FG) and quasi-floating-gate (QFG) with the advantages of bulk-driven (BD) technique and suppress their disadvantages. Consequently, the transconductance and transient frequency of BD-FG and BD-QFG MOSTs approach the conventional gate driven (GD) MOST values. Furthermore, a novel LV LP class AB second generation current conveyor based on BD-FG MOST is presented in this paper as an example. The supply voltage is only +-0.4 V with a rail-to-rail voltage swing capability and total power consumption of mere 10 uW. PSpice simulation results using the 0.18 um P-well CMOS technology are included to confirm the attractive properties of these new techniques.

Anglický abstrakt

In this paper, novel non-conventional techniques, named by the author of this paper "bulk-driven floating-gate (BD-FG)" MOS transistor (MOST) and "bulk-driven quasi-floating-gate (BD-QFG) MOST" for low-voltage (LV) low-power (LP) analog circuit design are presented. These novel techniques appear as a good solution to merge the advantages of floating-gate (FG) and quasi-floating-gate (QFG) with the advantages of bulk-driven (BD) technique and suppress their disadvantages. Consequently, the transconductance and transient frequency of BD-FG and BD-QFG MOSTs approach the conventional gate driven (GD) MOST values. Furthermore, a novel LV LP class AB second generation current conveyor based on BD-FG MOST is presented in this paper as an example. The supply voltage is only +-0.4 V with a rail-to-rail voltage swing capability and total power consumption of mere 10 uW. PSpice simulation results using the 0.18 um P-well CMOS technology are included to confirm the attractive properties of these new techniques.

BibTex


@article{BUT101032,
  author="Fabian {Khateb}",
  title="Bulk-driven floating-gate and bulk-driven quasi-floating-gate techniques for low-voltage low-power analog circuits design",
  annote="In this paper, novel non-conventional techniques, named by the author of this paper "bulk-driven floating-gate (BD-FG)" MOS transistor (MOST) and "bulk-driven quasi-floating-gate (BD-QFG) MOST" for low-voltage (LV) low-power (LP) analog circuit design are presented. These novel techniques appear as a good solution to merge the advantages of floating-gate (FG) and quasi-floating-gate (QFG) with the advantages of bulk-driven (BD) technique and suppress their disadvantages. Consequently, the transconductance and transient frequency of BD-FG and BD-QFG MOSTs approach the conventional gate driven (GD) MOST values. Furthermore, a novel LV LP class AB second generation current conveyor based on BD-FG MOST is presented in this paper as an example. The supply voltage is only +-0.4 V with a rail-to-rail voltage swing capability and total power consumption of mere 10 uW. PSpice simulation results using the 0.18 um P-well CMOS technology are included to confirm the attractive properties of these new techniques.",
  address="Urban and Fischer",
  chapter="101032",
  doi="10.1016/j.aeue.2013.08.019",
  institution="Urban and Fischer",
  number="1, IF: 0.696",
  volume="2014 (68)",
  year="2014",
  month="january",
  pages="64--72",
  publisher="Urban and Fischer",
  type="journal article in Web of Science"
}