Detail publikace

Microwave Solid State Power Amplifier Technology

Originální název

Microwave Solid State Power Amplifier Technology

Anglický název

Microwave Solid State Power Amplifier Technology

Jazyk

en

Originální abstrakt

This paper is focused on our current research in the field of power amplifier technology for microwaves, especially the X-band. For this purpose we considered different active devices. Unfortunately, we did not manage to obtain super modern GaN transistors (chips) for these frequencies such as TGA2023-05 from TriQuint or module such as TGA-2554-GSG from the same producer. Instead we used internally matched GaAs FETs from Eudyna as well as GaAs module XP-1006A from Mimix. Subsequently we have designed, built and tested three power amplifiers with different active devices and output power of 4, 8 and 20 Watts on 10 GHz. In the paper we would like to introduce design and completion of the amplifiers as well as test results. The highest power we achieved by double stage with 90 degrees 3 dB hybrid couplers at the input and output. The microstrip technique on PTFE substrate has been used. Critical parts of layouts were optimized by using ANSYS modeling software. The dc circuitry needs to be designed according to the proper time sequence and high dc currents. Corresponding cooling system was taken into account.

Anglický abstrakt

This paper is focused on our current research in the field of power amplifier technology for microwaves, especially the X-band. For this purpose we considered different active devices. Unfortunately, we did not manage to obtain super modern GaN transistors (chips) for these frequencies such as TGA2023-05 from TriQuint or module such as TGA-2554-GSG from the same producer. Instead we used internally matched GaAs FETs from Eudyna as well as GaAs module XP-1006A from Mimix. Subsequently we have designed, built and tested three power amplifiers with different active devices and output power of 4, 8 and 20 Watts on 10 GHz. In the paper we would like to introduce design and completion of the amplifiers as well as test results. The highest power we achieved by double stage with 90 degrees 3 dB hybrid couplers at the input and output. The microstrip technique on PTFE substrate has been used. Critical parts of layouts were optimized by using ANSYS modeling software. The dc circuitry needs to be designed according to the proper time sequence and high dc currents. Corresponding cooling system was taken into account.

BibTex


@inproceedings{BUT99483,
  author="Miroslav {Kasal}",
  title="Microwave Solid State Power Amplifier Technology",
  annote="This paper is focused on our current research in the field of power amplifier technology for microwaves, especially the X-band. For this purpose we considered different active devices. Unfortunately, we did not manage to obtain super modern GaN transistors (chips) for these frequencies such as TGA2023-05 from TriQuint or module such as TGA-2554-GSG from the same producer. Instead we used internally matched GaAs FETs from Eudyna as well as GaAs module XP-1006A from Mimix. Subsequently we have designed, built and tested three power amplifiers with different active devices and output power of 4, 8 and 20 Watts on 10 GHz. In the paper we would like to introduce design and completion of the amplifiers as well as test results. The highest power we achieved by double stage with 90 degrees 3 dB hybrid couplers at the input and output. The microstrip technique on PTFE substrate has been used. Critical parts of
layouts were optimized by using ANSYS modeling software. The dc circuitry needs to be designed according to the proper time sequence and high dc currents. Corresponding cooling system was taken into account.",
  address="Univerzita Pardubice",
  booktitle="13th Conference on Microwave Techniques COMITE 2013",
  chapter="99483",
  howpublished="electronic, physical medium",
  institution="Univerzita Pardubice",
  year="2013",
  month="april",
  pages="173--176",
  publisher="Univerzita Pardubice",
  type="conference paper"
}