Detail publikace

ELECTRIC MODEL OF REVERSE-BIASED SILICON SOLAR CELLS

MACKŮ, R. ŠICNER, J. KOKTAVÝ, P.

Originální název

ELECTRIC MODEL OF REVERSE-BIASED SILICON SOLAR CELLS

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

This paper is intended to present the results of our research whose objective consists in describing the behaviour of silicon solar cells, which have been prepared using the diffusion technology. In general, heavy current densities are being observed in the reverse biased specimens. We suggest the physical nature of an unconventional behavior of the solar cells without apparent local avalanche and thermal breakdowns by means of electrical model. The model is based on our knowledge of the solar cell production technology, in which the solar cell p+n junction arises through the diffusion of gaseous dopants on the top as well as at the bottom of the substrate. In consequence, an n+pn+ bipolar transistor structure is arising. A mathematical description of the equivalent circuit model will be put forward. By approximating the measured curves by our theoretical circuit function we managed to get new pieces of information concerning the processes taking place in the specimen.

Klíčová slova

Solar cell, Excess current, Reverse bias, Local defect, Edge isolation

Autoři

MACKŮ, R.; ŠICNER, J.; KOKTAVÝ, P.

Rok RIV

2012

Vydáno

11. 10. 2012

Nakladatel

Litera Brno

Místo

Brno

ISBN

978-80-214-4594-9

Kniha

New Trends in Physics

Edice

1

Číslo edice

1

Strany od

65

Strany do

68

Strany počet

4

BibTex

@inproceedings{BUT96032,
  author="Robert {Macků} and Jiří {Šicner} and Pavel {Koktavý}",
  title="ELECTRIC MODEL OF REVERSE-BIASED SILICON SOLAR CELLS",
  booktitle="New Trends in Physics",
  year="2012",
  series="1",
  number="1",
  pages="65--68",
  publisher="Litera Brno",
  address="Brno",
  isbn="978-80-214-4594-9"
}