Detail publikace

Simulation of quantum dot in electrostatic fields

GRMELA, L. HRUŠKA, P.

Originální název

Simulation of quantum dot in electrostatic fields

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Behavior of a nanostructure consisting of Si quantum dot (QD) embedded in SiO2 dielectric medium, which is under bias of varying electrostatic field is simulated. The paper presents the wave functions psi, probability functions psi.psi* and energies of quantum states of a QD. Abrupt displacement of the peak of psi.psi* at a certain field value is elucidated as electron emission. The field distribution and the characteristics of the nanostructure quantum states are simulated numerically with help of Comsol Multiphysics Poisson-Schrödinger 2D model, developed by the authors.

Klíčová slova

quantum dot,field distribution,electrostatic field, wave functions

Autoři

GRMELA, L.; HRUŠKA, P.

Rok RIV

2012

Vydáno

10. 9. 2012

Místo

Kharkiv, Ukraine

ISBN

978-1-4673-4479-1

Kniha

Mathematical Methods in Electromagnetic Theory

Strany od

193

Strany do

196

Strany počet

4

BibTex

@inproceedings{BUT96009,
  author="Lubomír {Grmela} and Pavel {Hruška}",
  title="Simulation of quantum dot in electrostatic fields",
  booktitle="Mathematical Methods in Electromagnetic Theory",
  year="2012",
  pages="193--196",
  address="Kharkiv, Ukraine",
  isbn="978-1-4673-4479-1"
}