Detail publikace

Structural properties of Al2O3/AlN thin film prepared by magnetron sputtering of Al in HF-activated nitrogen plasma

DALLAEVA, D. ŠKARVADA, P. TOMÁNEK, P. SMITH, S. SAFARALIEV, G. BILALOV, B. GITIKCHIEV, M. KARDASHOVA, G.

Originální název

Structural properties of Al2O3/AlN thin film prepared by magnetron sputtering of Al in HF-activated nitrogen plasma

Typ

článek v časopise - ostatní, Jost

Jazyk

angličtina

Originální abstrakt

A process for ion-plasmaformation of aluminumnitride (AlN) nanolayers on nitrided sapphire (Al2O3) substrates is presented. The method is based on the direct current magnetron sputtering of a high-purity aluminumtarget in the presence of an argon–nitrogen gas mix and high frequency-activated nitrogen plasma. The method, combined with ion etching, producedmatched layers by nitration of Al2O3 in the (0001) plane, and formation of high quality AlN epilayers on this surface was observed. The processing characteristics and morphology dependence on synthesis parameters were studied using atomic force microscopy.

Klíčová slova

Wide-band-gap semiconductor, aluminum nitride, magnetron sputtering, morphology, composition, X-ray photoelectron spectrometry, atomic force microscopy

Autoři

DALLAEVA, D.; ŠKARVADA, P.; TOMÁNEK, P.; SMITH, S.; SAFARALIEV, G.; BILALOV, B.; GITIKCHIEV, M.; KARDASHOVA, G.

Rok RIV

2013

Vydáno

4. 1. 2013

Nakladatel

Elsevier

Místo

North Holland

ISSN

0040-6090

Periodikum

Thin Solid Films

Ročník

526

Číslo

526

Stát

Nizozemsko

Strany od

92

Strany do

96

Strany počet

5

BibTex

@article{BUT95892,
  author="Dinara {Sobola} and Pavel {Škarvada} and Pavel {Tománek} and Steve J. {Smith} and Gadjimet {Safaraliev} and Bilal {Bilalov} and Magomed {Gitikchiev} and Gulnara {Kardashova}",
  title="Structural properties of Al2O3/AlN thin film prepared by magnetron sputtering of Al in HF-activated nitrogen plasma",
  journal="Thin Solid Films",
  year="2013",
  volume="526",
  number="526",
  pages="92--96",
  issn="0040-6090"
}