Detail publikace

Locally resolved topography and spectroscopy of semiconductors (with lateral resolution better than of 250 nm)

LÉTAL, P., BRÜSTLOVÁ, J., TOMÁNEK, P., DOBIS, P., GRMELA, L.

Originální název

Locally resolved topography and spectroscopy of semiconductors (with lateral resolution better than of 250 nm)

Anglický název

Locally resolved topography and spectroscopy of semiconductors (with lateral resolution better than of 250 nm)

Jazyk

en

Originální abstrakt

Locally resolved topography of semiconductor surface and jonction has been investigated and first results presnted.

Anglický abstrakt

Locally resolved topography of semiconductor surface and jonction has been investigated and first results presnted.

Dokumenty

BibTex


@inproceedings{BUT7998,
  author="Petr {Létal} and Jitka {Brüstlová} and Pavel {Tománek} and Pavel {Dobis} and Lubomír {Grmela}",
  title="Locally resolved topography and spectroscopy of semiconductors (with lateral resolution better than of 250 nm)",
  annote="Locally resolved topography of semiconductor surface and jonction has been investigated and first results presnted.",
  booktitle="Proc. of 5th Int.Conf. Electronic devices and systems 1998",
  chapter="7998",
  year="1998",
  month="september",
  pages="173",
  type="conference paper"
}