Detail publikace

Near field scanning optical microscopy as an imaging tool for carrier process in silicon

BENEŠOVÁ, M., TOMÁNEK, P., OTEVŘELOVÁ, D., DOBIS, P., GRMELA, L.

Originální název

Near field scanning optical microscopy as an imaging tool for carrier process in silicon

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

Characteristic time variations of carrier processes, such as the recombination of excess carriers, of oxidized silicon are measured as a function of position using near-field scanning optical microscopy (NSOM). Typical time constants from the region imaged agree well with those obtained by conventional spatial-averaging techniques for a wide range of samples. Images locate defects, reveal variations, and can map the regions in which a particular recombination process is active. The technique will be reviewed including the limits of resolution and signal strength, with illustrations from a variety of samples. Carrier diffusion in confined layers, such as SOI samples, will be discussed.

Klíčová slova

excess carrier lifetime, recombination, dynamics, near-field scanning optical microscopy, local measurement, superresolution

Autoři

BENEŠOVÁ, M., TOMÁNEK, P., OTEVŘELOVÁ, D., DOBIS, P., GRMELA, L.

Rok RIV

2003

Vydáno

1. 6. 2003

Nakladatel

Process Engineering Publisher

Místo

Praha

ISBN

80-86059-35-9

Kniha

Advanced engineering design

Strany od

F1.3

Strany do

F1.7

Strany počet

5