Detail publikace

Mutators for Transforming Nonlinear Resistor Into Memristor

BIOLEK, D. BAJER, J. BIOLKOVÁ, V. KOLKA, Z.

Originální název

Mutators for Transforming Nonlinear Resistor Into Memristor

Typ

článek ve sborníku ve WoS nebo Scopus

Jazyk

angličtina

Originální abstrakt

A method of analogue emulation of the memristor with its prescribed charge (qM)-flux (phiM) constitutive relation is presented. The memristor is emulated via a resistor with nonlinear current (iR)-voltage (vR) relationship, and a mutator. The purpose of the mutator is to provide a similarity transformation of the current-voltage characteristic of the resistor into the constitutive relation of the memristor according to the equations qM=kyiR, phiM =kxvR, or phiM=kyiR, qM=kxvR, where kx, ky are real numbers fulfilling the condition kxky>0. It is shown that there are eight versions of these mutators. One of them is selected for experimental verification.

Klíčová slova

memristor, constitutive relation, mutator

Autoři

BIOLEK, D.; BAJER, J.; BIOLKOVÁ, V.; KOLKA, Z.

Rok RIV

2011

Vydáno

29. 8. 2011

Nakladatel

IEEE

Místo

Linkoping, Sweden

ISBN

9781457706189

Kniha

Proceedings of the ECCTD 2011

Strany od

488

Strany do

491

Strany počet

4

BibTex

@inproceedings{BUT73106,
  author="Dalibor {Biolek} and Josef {Bajer} and Viera {Biolková} and Zdeněk {Kolka}",
  title="Mutators for Transforming Nonlinear Resistor Into Memristor",
  booktitle="Proceedings of the ECCTD 2011",
  year="2011",
  pages="488--491",
  publisher="IEEE",
  address="Linkoping, Sweden",
  isbn="9781457706189"
}